Fabrication and Characterization of Atomic Force Microscopy-Assisted Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

2016 ◽  
Vol 16 (12) ◽  
pp. 12831-12834
Author(s):  
Susanna Yu ◽  
Jung-Ho Lee ◽  
Sang-Mo Koo
Keyword(s):  
Atomic Force Microscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Force Microscopy ◽  
Atomic Force ◽  
Heterostructure Field Effect Transistors ◽  
Fabrication And Characterization ◽  
Gan Heterostructure

Molecularly clean ionic liquid/rubrene single-crystal interfaces revealed by frequency modulation atomic force microscopy

2015 ◽  
Vol 17 (10) ◽  
pp. 6794-6800 ◽  
Author(s):  
Yasuyuki Yokota ◽  
Hisaya Hara ◽  
Yusuke Morino ◽  
Ken-ichi Bando ◽  
Akihito Imanishi ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ionic Liquid ◽  
Single Crystal ◽  
Frequency Modulation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Force Microscopy ◽  
Atomic Force ◽  
Clean Interface ◽  
Crystal Interfaces

Frequency modulation atomic force microscopy was employed to show a molecularly clean interface between an ionic liquid and a rubrene single crystal for possible applications to electric double-layer field-effect transistors.

Nanoscale capacitance spectroscopy characterization of AlGaN/GaN heterostructure by current-sensing atomic force microscopy

2009 ◽  
Vol 105 (9) ◽  
pp. 094319 ◽  
Author(s):  
Huizhong Zeng ◽  
Haoming Sun ◽  
Wenbo Luo ◽  
Wen Huang ◽  
Zhihong Wang ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Sensing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Capacitance Spectroscopy ◽  
Gan Heterostructure

scholarly journals A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3336-3342 ◽  
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

scholarly journals Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9772-9772
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy

2007 ◽  
Vol 90 (17) ◽  
pp. 173106 ◽  
Author(s):  
Gunho Jo ◽  
Jongsun Maeng ◽  
Tae-Wook Kim ◽  
Woong-Ki Hong ◽  
Minseok Jo ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Force Microscopy ◽  
Atomic Force ◽  
Length Scaling
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