Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc

2015 ◽  
Vol 4 (6) ◽  
pp. 397-402 ◽  
Author(s):  
Volkan Şenay ◽  
Soner Özen ◽  
Suat Pat ◽  
Şadan Korkmaz
2015 ◽  
Vol 26 (11) ◽  
pp. 8983-8987 ◽  
Author(s):  
Soner Özen ◽  
Volkan Şenay ◽  
Suat Pat ◽  
Şadan Korkmaz

2015 ◽  
Vol 10 (3) ◽  
pp. 301-303 ◽  
Author(s):  
S. Pat ◽  
N. E. Çetin ◽  
Ş. Korkmaz ◽  
M. Z. Balbağ ◽  
N. Ekem

2017 ◽  
Vol 4 (1) ◽  
pp. 016410 ◽  
Author(s):  
Mutlu Kundakçı ◽  
Asim Mantarcı ◽  
Erman Erdoğan

2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  

2015 ◽  
Vol 45 (1) ◽  
pp. 255-261 ◽  
Author(s):  
Suat Pat ◽  
Volkan Şenay ◽  
Soner Özen ◽  
Şadan Korkmaz

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C


2010 ◽  
Vol 405 (16) ◽  
pp. 3276-3278 ◽  
Author(s):  
M.Z. Balbag ◽  
S. Pat ◽  
M. Ozkan ◽  
N. Ekem ◽  
G. Musa

2018 ◽  
Vol 30 (1) ◽  
pp. 624-630 ◽  
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Caner Musaoğlu ◽  
Uğur Demirkol ◽  
...  

Optik ◽  
2016 ◽  
Vol 127 (6) ◽  
pp. 3383-3387 ◽  
Author(s):  
Volkan Şenay ◽  
Soner Özen ◽  
Suat Pat ◽  
Şadan Korkmaz

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