Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation

2017 ◽  
pp. 57-97
Author(s):  
Lawrence T. Clark
Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1572
Author(s):  
Ehab A. Hamed ◽  
Inhee Lee

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.


2020 ◽  
Vol 67 (6) ◽  
pp. 1144-1151
Author(s):  
Ellis W. Richards ◽  
T. D. Loveless ◽  
J. S. Kauppila ◽  
T. D. Haeffner ◽  
W. T. Holman ◽  
...  

2009 ◽  
Vol 30 (3) ◽  
pp. 035007 ◽  
Author(s):  
Huang Zhengfeng ◽  
Liang Huaguo

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