A Continuous-Flow Method for Chemical Vapor Deposition of Tetramethoxysilane on .GAMMA.-Alumina to Prepare Silica Monolayer Solid Acid Catalyst.

2001 ◽  
Vol 34 (3) ◽  
pp. 306-311 ◽  
Author(s):  
NAONOBU KATADA ◽  
HITOSHI FUKUI ◽  
MIKI NIWA
Catalysts ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 21
Author(s):  
Davide Rigo ◽  
Nadia Alessandra Carmo Dos Santos ◽  
Alvise Perosa ◽  
Maurizio Selva

An unprecedented two-step sequence was designed by combining batch and continuous flow (CF) protocols for the upgrading of two aminodiol regioisomers derived from glycerol, i.e., 3-amino-1,2-propanediol and 2-amino-1,3-propanediol (serinol). Under batch conditions, at 80–90 °C, both substrates were quantitatively converted into the corresponding amides through a catalyst-free N-acetylation reaction mediated by an innocuous enol ester as isopropenyl acetate (iPAc). Thereafter, at 30–100 °C and 1–10 atm, the amide derivatives underwent a selective CF-acetalisation in the presence of acetone and a solid acid catalyst, to afford the double-functionalized (amide-acetal) products.


NANO ◽  
2012 ◽  
Vol 07 (06) ◽  
pp. 1250045 ◽  
Author(s):  
YUN SUN ◽  
RYO KITAURA ◽  
TAKUYA NAKAYAMA ◽  
YASUMITSU MIYATA ◽  
HISANORI SHINOHARA

The influences of synthesis parameters on the mean diameter and diameter distribution of as-grown single-wall carbon nanotubes (SWCNTs) with chemical vapor deposition (CVD) using the mist flow method have been investigated in detail with Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). We found that CVD reaction temperature and flow rate play an essential role in controlling the mean diameter and the quality of as-grown SWCNTs. Furthermore, we found that the carbon supply kinetics can be a dominant factor to determine the diameter of as-grown SWCNTs in the present mist flow method. Under a different combination of various parameters, the mean diameter of SWCNTs can be varied from 0.9 nm to 1.5 nm controllably.


2005 ◽  
Vol 287 ◽  
pp. 108-111 ◽  
Author(s):  
Y. Kim ◽  
Dong Geun Shin ◽  
Hyung Rae Kim ◽  
Hong Sik Park ◽  
Doh Hyung Riu

Polycarbosilane is the most typical polymeric precursor for SiC ceramic. In this study, liquid type polycarbosilane was synthesized from polydimethylsilane in the presence of solid acid catalyst at 350oC. The molecular weights of the polycarbosilane were ranged between 350 and 530. Synthesized polycarbosilane was characterized with 29Si Solid NMR, FT-IR and GPC analysis. The synthesized polycarbosilane can be used as a good organometallic precursor for SiC coating via chemical vapor deposition or spin coating.


2011 ◽  
Vol 7 ◽  
pp. 1680-1687 ◽  
Author(s):  
Magnus Rueping ◽  
Teerawut Bootwicha ◽  
Hannah Baars ◽  
Erli Sugiono

A simple, practical and efficient continuous-flow hydration–condensation protocol was developed for the synthesis of α,β-unsaturated ketones starting from alkynes and aldehydes by employing a heterogeneous catalyst in a flow microwave. The procedure presents a straightforward and convenient access to valuable differently substituted chalcones and can be applied on multigram scale.


Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  

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