scholarly journals B011 Experiment of Polarization Forces in Scanning Electrostatic Force Microscopy for Measuring Surface Profile of Dielectric

2013 ◽  
Vol 2013.7 (0) ◽  
pp. 200-203
Author(s):  
Gaofa HE ◽  
Zhigang JIA ◽  
So ITO ◽  
Yuki SHIMIZU ◽  
Wei GAO
Keyword(s):  
Electrostatic Force ◽  
Surface Profile ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy ◽  
Measuring Surface

scholarly journals Experiment of Polarization Forces in Scanning Electrostatic Force Microscopy for Measuring Surface Profile of Dielectric

2014 ◽  
Vol 8 (1) ◽  
pp. 342-347 ◽  
Author(s):  
Gaofa He ◽  
Zhigang Jia ◽  
So Ito ◽  
Yuki Shimizu ◽  
Wei Gao
Keyword(s):  
Electrostatic Force ◽  
Surface Profile ◽  
Electrostatic Force Microscopy ◽  
Dielectric Polarization ◽  
Optical Components ◽  
Force Microscopy ◽  
Polarization Force ◽  
Measuring Surface ◽  
Force Curves ◽  
Polarization Theory

For measuring the surface profile of many micro-optical components with complicated shapes, which are made of non-conductive material, the electrostatic force microscopy (EFM) was recommended. The relationship between the polarization force and the tip-to-sample distance was analyzed based on dielectric polarization theory. The prototype of the scanning electrostatic force microscopy was built. The force curves of different samples with different materials and surface shapes were detected by the EFM prototype. Both theoretical analysis and the experimental results demonstrated that the EFM system can be used to measure the surface profile of non-conductor.

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

scholarly journals Broadband nanodielectric spectroscopy by means of amplitude modulation electrostatic force microscopy (AM-EFM)

2011 ◽  
Vol 111 (8) ◽  
pp. 1366-1369 ◽  
Author(s):  
G.A. Schwartz ◽  
C. Riedel ◽  
R. Arinero ◽  
Ph. Tordjeman ◽  
A. Alegría ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

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