Tunable Infrared Optics Enabled by Defect-Engineering of Vanadium Dioxide Using Focused Ion Beam

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

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The role of chalcogen vacancies for atomic defect emission in MoS2

Nature Communications ◽

10.1038/s41467-021-24102-y ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Elmar Mitterreiter ◽

Bruno Schuler ◽

Ana Micevic ◽

Daniel Hernangómez-Pérez ◽

Katja Barthelmi ◽

...

Keyword(s):

Focused Ion Beam ◽

Single Photon ◽

Ion Beam ◽

Photon Emission ◽

Defect Engineering ◽

Single Photon Emission ◽

2D Semiconductors ◽

Ab Initio Theory ◽

Resolution Imaging

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

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MORPHOLOGY CONTROL OF CARBON NANOTUBES THROUGH FOCUSED ION BEAMS

NANO ◽

10.1142/s1793292008001398 ◽

2008 ◽

Vol 03 (06) ◽

pp. 449-454 ◽

Cited By ~ 5

Author(s):

M. LOYA ◽

J. E. PARK ◽

L. H. CHEN ◽

K. S. BRAMMER ◽

P. R. BANDARU ◽

...

Keyword(s):

Carbon Nanotubes ◽

Focused Ion Beam ◽

Ion Beam ◽

Multiwall Carbon Nanotubes ◽

Chemical Properties ◽

Defect Engineering ◽

Ion Milling ◽

Induced Changes ◽

Physical And Chemical ◽

Multiwall Carbon

This research demonstrates the capability of controlled, focused ion beam (FIB)–assisted tailoring of morphologies in both multiwall carbon nanotubes (CNTs) and Y junction nonlinear CNT systems through defect engineering. We have shown that a 30 keV FIB Ga + ion beam at low ion milling currents of 1 pA can be used to partially reduce the CNT diameter, to provide electrical conduction bottleneck morphologies for linear CNTs, and to introduce both additive and subractive defects at Y junction locations of Y-CNT samples. Our aim is for this work to provide motivation for additional research to determine the effects of ion-beam-induced changes in modulating the physical and chemical properties of nanotubes.

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Ion beam lithographic fabrication of ordered VO2 nanoparticle arrays

MRS Proceedings ◽

10.1557/proc-820-r1.5 ◽

2004 ◽

Vol 820 ◽

Author(s):

R. Lopez ◽

J. Y. Suh ◽

L. C. Feldman ◽

R. F. Haglund

Keyword(s):

Pulsed Laser Deposition ◽

Vanadium Dioxide ◽

Focused Ion Beam ◽

Ion Beam ◽

Pulsed Laser ◽

Laser Deposition ◽

Optical Resonances ◽

Ordered Arrays ◽

Close Proximity ◽

The Difference

AbstractLong-range ordered arrays of vanadium dioxide nanoparticles are fabricated by pulsed laser deposition in a patterned layer of poly(methyl methacrylate) resist. The two- dimensional arbitrary pattern is created by focused ion beam exposure of the resist, followed by pulsed laser deposition and thermal annealing. Interaction of light with the nanoparticles is controlled by their geometrical arrangement as well as by the difference in optical properties displayed between the metallic and semiconducting phases of VO2. Arrays like this open opportunities to study optical resonances and interactions for nanoparticles in close proximity, in the framework of the metal-semiconductor phase transition in VO2.

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A WALKING, SCANNING TUNNELING MICROSCOPE COMBINED WITH A FOCUSED ION BEAM

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989885 ◽

1989 ◽

Vol 50 (C8) ◽

pp. C8-497-C8-500

Author(s):

G. M. SHEDD ◽

P. E. RUSSELL

Keyword(s):

Scanning Tunneling Microscope ◽

Focused Ion Beam ◽

Ion Beam ◽

Scanning Tunneling ◽

Tunneling Microscope

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Mechanical Properties of the Carbonaceous Films Formed by Focused Ion-beam-assisted Chemical Vapor Deposition

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.130.949 ◽

2010 ◽

Vol 130 (10) ◽

pp. 949-954

Author(s):

Junichi Yanagisawa

Keyword(s):

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor

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Nanocomposite Polyurethane Foams Via POSS Blends

MRS Proceedings ◽

10.1557/proc-733-t1.6 ◽

2002 ◽

Vol 733 ◽

Author(s):

Brock McCabe ◽

Steven Nutt ◽

Brent Viers ◽

Tim Haddad

Keyword(s):

High Temperature ◽

Sample Preparation ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Polyurethane Foams ◽

Development Projects ◽

Polymer Systems ◽

Polyurethane Resin ◽

Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

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An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

MRS Proceedings ◽

10.1557/proc-719-f8.36 ◽

2002 ◽

Vol 719 ◽

Author(s):

Myoung-Woon Moon ◽

Kyang-Ryel Lee ◽

Jin-Won Chung ◽

Kyu Hwan Oh

Keyword(s):

Cross Sections ◽

Focused Ion Beam ◽

Imaging System ◽

Ion Beam ◽

Carbon Films ◽

Diamond Like Carbon ◽

Glass Substrates ◽

Atomic Force ◽

Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

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Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

10.31399/asm.cp.istfa2018p0241 ◽

2018 ◽

Author(s):

C.S. Bonifacio ◽

P. Nowakowski ◽

M.J. Campin ◽

M.L. Ray ◽

P.E. Fischione

Keyword(s):

Field Effect Transistor ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Ion Milling ◽

Transmission Electron ◽

High Resolution Tem ◽

Effect Transistor ◽

20 Nm ◽

Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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