scholarly journals High-Performance β-Ga2O3-based Solar-Blind Photodetector with Ultralow Dark Current and Fast Photoresponse for Deep-Ultraviolet Communication

2021 ◽  
Author(s):  
Shuren Zhou ◽  
Xuan Peng ◽  
Haowen Liu ◽  
Zhengfeng Zhang ◽  
Lijuan Ye ◽  
...  
Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1178
Author(s):  
Min Zhang ◽  
Zhenjiang Li ◽  
Yunfei Zhao ◽  
Zhaofeng Wu ◽  
Jun Zhang ◽  
...  

In this study, ultraviolet detectors based on NaTaO3/TiO2 were fabricated with enhanced detection performance towards solar-blind (200–280 nm) light. A TiO2 seed layer was introduced and served as a buffer layer between the fluorine tin oxide (FTO)-coated glass substrate and the TiO2 film, which increased the adhesion between them. The periodic stability and photoelectric characteristics of the detectors were studied and analyzed. The detectors showed a high performance when illuminated by 265 nm and 254 nm UV light. At −15 V bias, the dark current of the detector was only 70 pA. Under the bias of −15 V and the illumination of 254 nm, the maximum photo-to-dark current ratio reached 20, and the response time was less than 300 ms. Moreover, the detector exhibited a fast response time and remained very stable after numerous testing cycles. These results demonstrate the potential application of NaTaO3/TiO2 composites in UV detection.


2003 ◽  
Vol 764 ◽  
Author(s):  
Mauro Mosca ◽  
Jean-Luc Reverchon ◽  
Nicolas Grandjean ◽  
Franck Omnès ◽  
Jean-Yves Duboz ◽  
...  

AbstractIn this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as ∼270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We observed that both the interdigitated electrodes and the contact areas contribute to the overall photocurrent. In order to avoid the parasitic current due to the contact pads, we developed a new process where the electrodes are deposited on the (Al,Ga)N surface whereas the contact pads are deposited on an insulator (dielectric) layer besides the electrodes. Some layers develop microcracks related to excess stress. In that case, we showed that both the dark current and the responsivity strongly depend on the crack density. By using our two-level process, we could reduce the parasitic effects of cracks on the dark current. Several dielectrics were tested and our results are reported; values of dark current < 10 fA have been measured at 10 V bias voltage. An extremely high performance can then be reached in these ultraviolet solar blind detectors.


2015 ◽  
Vol 26 (5) ◽  
pp. 704-712 ◽  
Author(s):  
Xing Zhou ◽  
Qi Zhang ◽  
Lin Gan ◽  
Xin Li ◽  
Huiqiao Li ◽  
...  

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.


2001 ◽  
Vol 188 (1) ◽  
pp. 325-328 ◽  
Author(s):  
J.-Y. Duboz ◽  
J.-L. Reverchon ◽  
D. Adam ◽  
B. Damilano ◽  
F. Semond ◽  
...  
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