scholarly journals Beyond grayscale lithography: inherently three-dimensional patterning by Talbot effect

2019 ◽  
Vol 8 (3-4) ◽  
pp. 233-240
Author(s):  
Roberto Fallica
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Talbot Effect ◽  
Large Area ◽  
Projection Lithography ◽  
Main Technique ◽  
Direct Laser ◽  
The Cost ◽  
Diffraction Effects

Abstract There are a growing number of applications where three-dimensional patterning is needed for the fabrication of micro- and nanostructures. Thus far, grayscale lithography is the main technique for obtaining a thickness gradient in a resist material that is exploited for pattern transfer by anisotropic etch. However, truly three-dimensional structures can only be produced by unconventional lithography methods such as direct laser writing, focused ion beam electrodeposition, colloidal sphere lithography, and tilted multiple-pass projection lithography, but at the cost of remarkable complexity and lengthiness. In this work, the three-dimensional shape of light, which is formed by Talbot effect diffraction, was exploited to produce inherently three-dimensional patterns in a photosensitive polymer. Using light in the soft X-ray wavelength, periodic three-dimensional structures of lateral period 600 nm were obtained. The position at which the sample has to be located to be in the Fresnel regime was simulated using an analytical implementation of the Fresnel integrals approach. Exploiting the light shape forming in diffraction effects thus enables the patterning of high-resolution three-dimensional nanostructures over a large area and with a single exposure pass – which would be otherwise impossible with conventional lithographic methods.

ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

2005 ◽  
Vol 04 (03) ◽  
pp. 269-286 ◽  
Author(s):  
F. WATT ◽  
A. A. BETTIOL ◽  
J. A. VAN KAN ◽  
E. J. TEO ◽  
M. B. H. BREESE
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Focused Ion Beam ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Large Area ◽  
Near Surface ◽  
X Ray ◽  
Projection Lithography ◽  
New Generation

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

Combined Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam (FIB) Techniques for Thin Film Solar Cell Characterization

2010 ◽  
Author(s):  
Frank Altmann ◽  
Jan Schischka ◽  
Vinh Van Ngo ◽  
Stacey Stone ◽  
Laurens F. Tz. Kwakman ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Three Dimensional ◽  
Region Of Interest ◽  
Induced Current ◽  
Large Area ◽  
Electron Beam Induced Current

Abstract A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate the larger, electrically active defects reasonably fast on a large area, the FIB-SEM EBIC system is uniquely capable of detecting sub-micron, sub-surface defects and of analysing these defects in the same system. In combination with a FIB, the localized region of interest can be easily cross sectioned and additional EBIC analysis can be applied for a three dimensional analysis of the p/n junction.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

scholarly journals Investigation of the selective color-changing mechanism of Dynastes tityus beetle (Coleoptera: Scarabaeidae)

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiyu Sun ◽  
Wei Wu ◽  
Limei Tian ◽  
Wei Li ◽  
Fang Zhang ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Color Change ◽  
Incidence Angle ◽  
Ion Beam ◽  
Three Dimensional ◽  
Water Infiltration ◽  
Photonic Materials ◽  
Local Color ◽  
Water Contact ◽  
Color Changes

AbstractNot only does the Dynastes tityus beetle display a reversible color change controlled by differences in humidity, but also, the elytron scale can change color from yellow-green to deep-brown in specified shapes. The results obtained by focused ion beam-scanning electron microscopy (FIB-SEM), show that the epicuticle (EPI) is a permeable layer, and the exocuticle (EXO) is a three-dimensional photonic crystal. To investigate the mechanism of the reversible color change, experiments were conducted to determine the water contact angle, surface chemical composition, and optical reflectance, and the reflective spectrum was simulated. The water on the surface began to permeate into the elytron via the surface elemental composition and channels in the EPI. A structural unit (SU) in the EXO allows local color changes in varied shapes. The reflectance of both yellow-green and deep-brown elytra increases as the incidence angle increases from 0° to 60°. The microstructure and changes in the refractive index are the main factors that influence the process of reversible color change. According to the simulation, the lower reflectance causing the color change to deep-brown results from water infiltration, which increases light absorption. Meanwhile, the waxy layer has no effect on the reflection of light. This study lays the foundation to manufacture engineered photonic materials that undergo controllable changes in iridescent color.

scholarly journals Protocol for preparation of heterogeneous biological samples for 3D electron microscopy: a case study for insects

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexey A. Polilov ◽  
Anastasia A. Makarova ◽  
Song Pang ◽  
C. Shan Xu ◽  
Harald Hess
Keyword(s):  
Electron Microscopy ◽  
Biological Samples ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Entire Volume ◽  
Simple Protocol ◽  
3D Electron Microscopy ◽  
3D Em

AbstractModern morphological and structural studies are coming to a new level by incorporating the latest methods of three-dimensional electron microscopy (3D-EM). One of the key problems for the wide usage of these methods is posed by difficulties with sample preparation, since the methods work poorly with heterogeneous (consisting of tissues different in structure and in chemical composition) samples and require expensive equipment and usually much time. We have developed a simple protocol allows preparing heterogeneous biological samples suitable for 3D-EM in a laboratory that has a standard supply of equipment and reagents for electron microscopy. This protocol, combined with focused ion-beam scanning electron microscopy, makes it possible to study 3D ultrastructure of complex biological samples, e.g., whole insect heads, over their entire volume at the cellular and subcellular levels. The protocol provides new opportunities for many areas of study, including connectomics.

scholarly journals Site Specific Three-dimensional Structural Analysis in Tissues and Cells Using Automated DualBeam Slice &View

2007 ◽  
Vol 15 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Ben Lich
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Surface Region ◽  
Dimensional Structure ◽  
Near Surface ◽  
Imaging Capability ◽  
Fluorescent Markers ◽  
Confocal And Electron Microscopy

DualBeam instruments that combine the imaging capability of scanning electron microscopy (SEM) with the cutting and deposition capability of a focused ion beam (FIB) provide biologists with a powerful tool for investigating three-dimensional structure with nanoscale (1 nm-100 nm) resolution. Ever since Van Leeuwenhoek used the first microscope to describe bacteria more than 300 years ago, microscopy has played a central role in scientists' efforts to understand biological systems. Light microscopy is generally limited to a useful resolution of about a micrometer. More recently the use of confocal and electron microscopy has enabled investigations at higher resolution. Used with fluorescent markers, confocal microscopy can detect and localize molecular scale features, but its imaging resolution is still limited. SEM is capable of nanometer resolution, but is limited to the near surface region of the sample.

Molding of Three-Dimensional Microcomponents

2006 ◽  
Author(s):  
W. N. P. Hung ◽  
M. M. Agnihotri ◽  
M. Y. Ali ◽  
S. Yuan
Keyword(s):  
Focused Ion Beam ◽  
New Technologies ◽  
Electrical Discharge Machining ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Cost Effective ◽  
Molecular Structures ◽  
Minimum Size ◽  
Ion Beam Sputtering

Traditional micromanufacturing has been developed for semiconductor industry. Selected micro electrical mechanical systems (MEMS) have been successfully developed and implemented in industry. Since current MEMS are designed for manufacture using microelectronics processes, they are limited to two-dimensional profiles and semiconductor based materials. Such shape and material constraints would exclude many applications that require biocompatibility, dynamic stress, and high ductility. New technologies are sought to fabricate three dimensional microcomponents using robust materials for demanding applications. To be cost effective, such microdevices must be economically mass producible. Molding is one of the promising replication techniques to mass produce components from polymers and polymer-based composites. This paper presents the development of a micromolding process to produce thermoplastic microcomponents. Mold design required precision fitting and was integrated with a vacuum pump to minimize air trap in mold cavities. Nickel and aluminum mold inserts were used for the study; their cavities were fabricated by combinations of available micromachining processes like laser micromachining, micromilling, micro electrical discharge machining, and focused ion beam sputtering. High and low density polyethylene, polystyrene polymers were used for this study. The effects of polymer molecular structures, molding temperature, time, and pressure on molding results were studied. Simulation of stress in the microcomponents, plastic flow in microchannels, and mold defects was performed and compare with experimental data. The research results showed that a microcomponent can be fabricated to the minimum size of 10 ± 1μm (0.0004 inch) with surface roughness <10 nm Rt. Molding of micro-size geartrains and orthopedic meso-size fasteners was completed to illustrate the capability of this process.

Fabrication of large area nanogap electrodes for sensing applications

2013 ◽  
Vol 1530 ◽  
Author(s):  
A. Bendavid ◽  
L. Wieczorek ◽  
R. Chai ◽  
J. S. Cooper ◽  
B. Raguse
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Fabrication Method ◽  
Large Area ◽  
Sensor Applications ◽  
Sensing Applications ◽  
Lift Off ◽  
Nanogap Electrodes

ABSTRACTA large area nanogap electrode fabrication method combinig conventional lithography patterning with the of focused ion beam (FIB) is presented. Lithography and a lift-off process were used to pattern 50 nm thick platinum pads having an area of 300 μm × 300 μm. A range of 30-300 nm wide nanogaps (length from 300 μm to 10 mm ) were then etched using an FIB of Ga+ at an acceleration voltage of 30 kV at various beam currents. An investigation of Ga+ beam current ranging between 1-50 pA was undertaken to optimise the process for the current fabrication method. In this study, we used Monte Carlo simulation to calculate the damage depth in various materials by the Ga+. Calculation of the recoil cascades of the substrate atoms are also presented. The nanogap electrodes fabricated in this study were found to have empty gap resistances exceeding several hundred MΩ. A comparison of the gap length versus electrical resistance on glass substrates is presented. The results thus outline some important issues in low-conductance measurements. The proposed nanogap fabrication method can be extended to various sensor applications, such as chemical sensing, that employ the nanogap platform. This method may be used as a prototype technique for large-scale fabrication due to its simple, fast and reliable features.

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