scholarly journals Interface-induced field-like optical spin torque in a ferromagnet/heavy metal heterostructure

Nanophotonics ◽  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Satoshi Iihama ◽  
Kazuaki Ishibashi ◽  
Shigemi Mizukami
Keyword(s):  
Heavy Metal ◽  
Ferromagnetic Layer ◽  
Optical Manipulation ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Ferromagnetic Thin Films ◽  
Plane Field ◽  
Structural Inversion ◽  
Induced Field ◽  
Metallic Ferromagnet

AbstractThe manipulation of magnetization in a metallic ferromagnet by using optical helicity has been much attracted attention for future opto-spintronic devices. The optical helicity–induced torques on the magnetization, optical spin torque, have been observed in ferromagnetic thin films recently. However, the interfacial effect of the optical spin torque in ferromagnet/nonmagnetic heavy metal heterostructures have not been addressed so far, which are widely utilized to efficiently control magnetization via electrical means. Here, we studied optical spin torque vectors in the ferromagnet/nonmagnetic heavy metal heterostructures and observed that in-plane field-like optical spin torque was significantly increased with decreasing ferromagnetic layer thicknesses. The interfacial field-like optical spin torque was explained by the optical Rashba–Edelstein effect caused by the structural inversion symmetry breaking. This work will aid in the efficient optical manipulation of thin film nanomagnets using optical helicity.

Hysteretic spin-wave excitation in spin-torque oscillators as a function of the in-plane field angle: A micromagnetic description

2011 ◽  
Vol 110 (12) ◽  
pp. 123913 ◽  
Author(s):  
G. Finocchio ◽  
A. Prattella ◽  
G. Consolo ◽  
E. Martinez ◽  
A. Giordano ◽  
...  
Keyword(s):  
Spin Wave ◽  
Spin Torque ◽  
Wave Excitation ◽  
Plane Field ◽  
Spin Wave Excitation ◽  
Spin Torque Oscillators

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices

2018 ◽  
Vol 30 (40) ◽  
pp. 1802902 ◽  
Author(s):  
Mengmeng Guan ◽  
Lei Wang ◽  
Shishun Zhao ◽  
Ziyao Zhou ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Spintronic Devices ◽  
Bilayer System ◽  
Magnetic Insulator

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan
Keyword(s):  
Spin Valve ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Frequency Tunability ◽  
Spin Polarized ◽  
The Individual ◽  
Promising Source ◽  
Nonmagnetic Spacer

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.

scholarly journals Design rules for scalability in spin-orbit electronics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Mohammad Kazemi ◽  
Mark F. Bocko
Keyword(s):  
Heavy Metal ◽  
Power Consumption ◽  
Low Power ◽  
Topological Insulator ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Thermal Fluctuations ◽  
Low Power Consumption ◽  
Spin Orbit ◽  
Design Rules

Abstract Spin-orbit electronics (spin-orbitronics) has been widely discussed for enabling nonvolatile devices that store and process information with low power consumption. The potential of spin-orbitronics for memory and logic applications has been demonstrated by perpendicular anisotropy magnetic devices comprised of heavy-metal/ferromagnet or topological-insulator/ferromagnet bilayers, where the heavy metal or topological insulator provides an efficient source of spin current for manipulating information encoded in the bistable magnetization state of the ferromagnet. However, to reliably switch at room temperature, spin-orbit devices should be large to reduce thermal fluctuations, thereby compromising scalability, which in turn drastically increases power dissipation and degrades performance. Here, we show that the scalability is not a fundamental limitation in spin-orbitronics, and by investigating the interactions between the geometry of the ferromagnetic layer and components of the spin-orbit torque, we derive design rules that lead to deeply scalable spin-orbit devices. Furthermore, employing experimentally verified models, we propose deeply scaled spin-orbit devices exhibiting high-speed deterministic switching at room temperature. The proposed design principles are essential for design and implementation of very-large-scale-integration (VLSI) systems that provide high performance operation with low power consumption.

Utilizing spin currents from the dual surfaces of a heavy metal Pt layer for simultaneous spin-torque switching in FeTb/Pt/FeTb trilayers

2021 ◽  
Vol 118 (21) ◽  
pp. 212406
Author(s):  
Yiqing Dong ◽  
Li Cai ◽  
Teng Xu ◽  
Heng-An Zhou ◽  
Wanjun Jiang
Keyword(s):  
Heavy Metal ◽  
Spin Torque ◽  
Spin Currents

scholarly journals SPIN WAVES ALONG THE EDGE STATES

SPIN ◽  
2014 ◽  
Vol 04 (01) ◽  
pp. 1440003 ◽  
Author(s):  
A. LARA ◽  
V. METLUSHKO ◽  
M. GARCÍA-HERNÁNDEZ ◽  
F. G. ALIEV
Keyword(s):  
Wave Propagation ◽  
Aspect Ratio ◽  
Spin Waves ◽  
Dipolar Interaction ◽  
Two Dimensional ◽  
Edge States ◽  
Effective Spin ◽  
One Dimensional ◽  
Spintronic Devices ◽  
Plane Field

Spin waves (SWs) have been studied experimentally and by simulations in 1000 nm side equilateral triangular Permalloy dots in the Buckle state (B, with in-plane field along the triangle base) and the Y state (Y, with in-plane field perpendicular to the base). The excess of exchange energy at the triangles edges creates channels that allow effective spin wave propagation along the edges in the B state. These quasi one-dimensional SWs emitted by the vertex magnetic charges gradually transform from propagating to standing due to interference and (as pointed out by simulations) are weakly affected by small variations of the aspect ratio (from equilateral to isosceles dots) or by interdot dipolar interaction present in our dot arrays. SWs excited in the Y state have mainly a two-dimensional character. Propagation of the SWs along the edge states in triangular dots opens possibilities for creation of new and versatile spintronic devices.

scholarly journals Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
Hall Effect ◽  
Memory Loss ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Orbit ◽  
Metallic Materials ◽  
Spintronic Devices ◽  
Damping Parameter ◽  
Inverse Spin Hall Effect ◽  
High Bulk

AbstractThe spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt.

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