Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass

2017 ◽  
Vol 89 (4) ◽  
pp. 429-436 ◽  
Author(s):  
Dianna Himics ◽  
Lukas Strizik ◽  
Jana Holubova ◽  
Ludvik Benes ◽  
Karel Palka ◽  
...  

AbstractWe investigated the physicochemicаl properties, structure and optical properties of the Ge25Ga9.5Sb0.5S65: Er3+/Yb3+ glasses. The Judd-Ofelt theory was used to calculate the intensities of the intra-4f electronic transitions of Er3+ ions. We observed the upconversion photoluminescence (UCPL) at 530, 550, 660 and 810 nm under 980 nm excitation. In the Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+, we found that the Stokes photoluminescence (PL) at the green spectral region excited by the 490 and 532 nm laser is only ≈5 times higher than the UCPL emission under 810 or 980 nm excitation making these materials attractive for UCPL applications. The addition of 0.1–1 at.% of Yb3+ into Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+ glass reduces the UCPL as well as the Er3+ ≈1.5 μm emission intensity probably due to the reabsorption processes of the excitation light and concentration quenching. However, the observed Er3+: 4S3/2→4I13/2 (≈850 nm) emission in the Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+ sample populates the 4I13/2 level, which promises the using of this material for the 1.5 μm optical amplification.

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2598-2603
Author(s):  
KIMIHISA MATSUMOTO ◽  
KENJI IMAKITA ◽  
MINORU FUJII ◽  
SHINJI HAYASHI

Photoluminescence (PL) properties of Er and Si nanocrystals co-doped SiO 2 films are studied in a wide Er concentration range. In the Er concentration range of less than 3 at%, Er 3+ was excited by the energy transfer from Si nanocrystals. Above this concentration, Si nanocrystals and Er do not exist independently but amorphous or crystallin alloys of Si-Er-O are formed. In this region Er can be excited only by directly absorbed excitation light. The highest PL intensity is observed in the Er concentration range where an amorphous alloy of Si-Er-O is formed.


Author(s):  
Zein K. Heiba ◽  
Mohamed Bakr Mohamed ◽  
Noura M. Farag ◽  
Sameh I. Ahmed
Keyword(s):  

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 882
Author(s):  
Yuechan Li ◽  
Yongli Li ◽  
An Xie

Doping impurity into ZnO is an effective and powerful technique to tailor structures and enhance its optical properties. In this work, Zn1−xMgxO and Zn1−x−yMgxByO nanoparticles (x = 0, 0.1, 0.2, 0.3, 0.4; y = 0, 0.02, 0.04) were synthesized via one-pot method. It shows that the Mg and B dopants has great influence on crystallinity and surface morphology of ZnO nanoparticles, without changing the wurtzite structure of ZnO. The band structure study indicates that the competition of Conductive Band (CB) shift, Burstein–Moss (B-M) shift and Shrinkage effect will cause the band gap energy change in ZnO.


2021 ◽  
Vol 129 (5) ◽  
pp. 053104
Author(s):  
Yan Jiao ◽  
Mengting Guo ◽  
Renle Wang ◽  
Chongyun Shao ◽  
Lili Hu

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


2011 ◽  
Vol 33 (11) ◽  
pp. 1630-1637 ◽  
Author(s):  
Radosław Lisiecki ◽  
Elżbieta Augustyn ◽  
Witold Ryba-Romanowski ◽  
Michał Żelechower

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