Charge Carrier Mobility Behavior in the SubPc/C60 Planar Heterojunction
Keyword(s):
AbstractStructural arrangement and construction are the keys to electron/hole motion through organic semiconductor lattices. In this work, we focused on the disorder energy, temperature, and electric field effects on charge carrier mobilities using a Poole–Frenkel mobility model for SubPc/C60 devices. The results agree with those found in the literature. We observed important temperature, applied voltage, and disorder energy dependencies of the current-voltage characteristics and charge carrier mobilities; these characteristics have the Gunn curve form called negative conductivity, which has been reported in amorphous semiconductors.
2017 ◽
Vol 50
(20)
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pp. 205106
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2016 ◽
Vol 155
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pp. 155-165
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2020 ◽
Vol 67
(7)
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pp. 2738-2744
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1996 ◽
Vol 105
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pp. 969-974
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2019 ◽
Vol 68
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pp. 310-312