Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Optimized Fabrication Process of PZT Thin Film Capacitor for MMIC Applications

2009 ◽  
Author(s):  
R. A. Bakar ◽  
S. Sulaiman ◽  
N. F. M. Lazim ◽  
Z. Awang ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Fabrication Process ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Transfer of Ferroelectric Thin Film Capacitor Using Internal Stress of Plated Film

2021 ◽  
Vol 141 (2) ◽  
pp. 39-43
Author(s):  
Kazutaka Sueshige ◽  
Masahisa Fujino ◽  
Tadatomo Suga ◽  
Masaaki Ichiki
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Ferroelectric Thin Film ◽  
Film Capacitor ◽  
Thin Film Capacitor

Effect of grounding arrangement on PZT thin film capacitor

2007 ◽  
Author(s):  
Suhana Sulaiman ◽  
Nor Fazlina Mohd Lazim ◽  
Raudah Abu Bakar ◽  
Zaiki Awang ◽  
Asban Dollah
Keyword(s):  
Thin Film ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Effect of Surface Morphology of NiCr-Bottom Electrode on Preparation of Ferroelectric PZT Thin Film Capacitor

1996 ◽  
Vol 433 ◽  
Author(s):  
K.B. Lee ◽  
B.R. Rhee ◽  
S.K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Capacitor ◽  
Spin Casting ◽  
Thin Film Capacitor ◽  
Atomic Force ◽  
Pzt Thin Film

AbstractWe have studied the optimum conditions of the deposition of NiCr-bottom electrode for preparing the ferroelectric PZT(50/50) thin film capacitor. The NiCr(80/20) layer of about 300nm in thickness was deposited on bare Si(111) wafer by rf magnetron sputtering. The surface morphology and crystallinity were investigated by using Atomic force microscope (AFM) and X-ray diffractormeter (XRD). It is found that the size and crystallinity of grains of NiCr or Ni-silicide depend mainly on the rf power. The PZT(50/50) thin films were prepared on NiCr/Si substates by spin-casting of PZT coating sol and then annealing at 520°C in air for crystallization. The undesirable Pb-silicate is found to be grown during post-annealing in case that substrates having NiCr layer deposited by high power above 80 W are used. We suggest that the formation of Pb-silicate is due to the thermal diffusion of Pb or PbO through crystalline NiCr-grain boundaries. The ferroelectric PZT thin films having the perovskite structure can be obtained by using the NiCr-bottom electrodes whose morphologies are in the amorphous-crystalline boundaries, in which the surface roughness and grain size of NiCr layer is minimum. The values of the dielectric constant, εn, were measured in the range 300˜500, the remanent polarization, Pr, in the range 10˜13 C/cm2 and the coercive field, Ec, around 160 kV/cm, depending on the deposition conditions of NiCr layers.

Interconnect-Related Degradation of PZT Capacitor for FeRAM

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Kobayashi ◽  
K. Amanuma ◽  
H. Hada
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Possible Cause

AbstractFerroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.

scholarly journals Thin-Film Capacitor Technology for Improving Broadband Power Integrity

2019 ◽  
Vol 9 (7) ◽  
pp. 1319-1327
Author(s):  
William B. Kuhn ◽  
Andrew D. Fund ◽  
J. Ambrose Wolf ◽  
Robert W. Schwartz ◽  
James Claypool ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Integrity ◽  
Film Capacitor ◽  
Thin Film Capacitor

Thin-film capacitor based on the strontium titanate formed by the sol gel technique

2015 ◽  
Vol 44 (6) ◽  
pp. 425-429 ◽  
Author(s):  
Kh. Sokhrabi Anaraki ◽  
N. V. Gaponenko ◽  
M. V. Rudenko ◽  
V. V. Kolos ◽  
A. N. Petlitskii ◽  
...  
Keyword(s):  
Thin Film ◽  
Strontium Titanate ◽  
Sol Gel ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Gel Technique
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