Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

Adhesion of polycrystalline diamond thin films on single‐crystal silicon substrates

1991 ◽  
Vol 59 (20) ◽  
pp. 2529-2531 ◽  
Author(s):  
C. A. Gamlen ◽  
E. D. Case ◽  
D. K. Reinhard ◽  
B. Huang
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Diamond Thin Films

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Volume Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Low Volume ◽  
Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
H.R. Moutinho ◽  
C.-S. Jiang ◽  
B. Nelson ◽  
Y. Xu ◽  
J. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Influence Of Substrate

AbstractWe have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Preparation and Characteristics of Nanocrystalline Diamond Film by Using of MPVCD

2011 ◽  
Vol 304 ◽  
pp. 1-5
Author(s):  
Bao Hua Yang ◽  
Hua Li Ma ◽  
Hong Yan Lu ◽  
Xiao Bo Zhang
Keyword(s):  
Microwave Plasma ◽  
Particle Diameter ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Carbon Phase ◽  
Crystal Silicon ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Raman ◽  
Laser Raman Spectra ◽  
Single Crystal Silicon Substrate

With the microwave plasma chemical vapor deposition (MPCVD), the effects of the deposition pressure and the different substrate temperature on diamond coating on single crystal silicon substrate were studied systemically. The sample was characterized by means of scanning electron microscopy (SEM) and laser Raman spectra (Raman). The experimental results showed that the surface of the film was compact, the mean particle diameter was 98nm, and that it contains thesp3carbon phase with good quality.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

NANOCRYSTALLINE DIAMOND THIN FILMS AS INFRARED OPTICAL PROTECTIVE COATINGS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1013-1017 ◽  
Author(s):  
JINGQI LI ◽  
DEYAN HE ◽  
WANTU GUO ◽  
JIHUA ZHANG ◽  
YINING SUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Protective Coatings ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Nanocrystalline Diamond ◽  
Diamond Surface ◽  
Infrared Transmission ◽  
Infrared Wavelength ◽  
Diamond Thin Films

Nanocrystalline diamond thin films have been grown on both sides of Si wafer by microwave plasma-enhanced chemical vapor deposition using a mixture of CH4 and H2 as source gas. It was shown that infrared transmission of Si has been greatly enhanced and the maximum transmittance reaches 85%. By optimizing the film thickness, we can obtain the maximum increment in the desired infrared wavelength range. Sand spraying test showed that, while the bare Si substrate exhibited obvious surface damage, no damage could be observed on the diamond surface after the sand spraying. The results confirm that the nanocrystalline diamond films coated on Si can not only increase the infrared transmission but also act as a protective coating.

Growth of diamond thin films by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (4) ◽  
pp. 1019-1024 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Diamond Thin Films

A very high vacuum compatible microwave plasma chemical vapor deposition system has been fabricated for the growth of diamond thin films. Microcrystalline diamond thin films have been grown on silicon substrates from the CH4−H2 gas mixture. Scanning electron microscopy and x-ray diffraction have been used to study the surface morphology and the crystallographic structure of the films. Optical emission spectroscopy has been used for the detection of chemical species present in the plasma. The strong dependence of the film microstructure on the intensity of CH emission line has been observed.

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