A novel route for the synthesis of Sr1−xBaxNb2O6 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2404-2407 ◽  
Author(s):  
A. Kashani ◽  
M.S. Tomar ◽  
E. Dayalan
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Crystalline Material ◽  
Silicon Substrates ◽  
Silicon Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Niobium Ethoxide

Stoichiometric Sr1−xBaxNb2O6 (SBN) powder and thin films were prepared by a chemical method. The starting materials were niobium ethoxide and the hydroxides of strontium and barium. Powders were obtained by evaporation of the precursor solution, and thin films were deposited by spin coating. Annealing temperature required to obtain complete conversion to the crystalline material was about 700 °C. Stoichiometric polycrystalline films of Sr1−xBaxNb2O6 were deposited on quartz and silicon substrates. Leakage current-voltage and the capacitance-voltage measurements on a metal/SBN/n-silicon structure show a diode-type characteristic.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Nima Rouhi ◽  
Behzad Esfandyarpour ◽  
Shams Mohajerzadeh ◽  
Pouya Hashemi ◽  
Bahman Hekmat-Shoar ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxidation Process ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
High Quality ◽  
Silicon Thin Films ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mos Structures

AbstractWe report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Effect of Annealing Temperature on Properties of SnO2 Thin Films Prepared by Spin Coating

2019 ◽  
Vol 40 (2) ◽  
pp. 164-170 ◽  
Author(s):  
张 旭 ZHANG Xu ◽  
刘贤哲 LIU Xian-zhe ◽  
袁炜健 YUAN Wei-jian ◽  
邓宇熹 DENG Yu-xi ◽  
张啸尘 ZHANG Xiao-chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sno2 Thin Films

Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates

2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Annealing Temperatures ◽  
Uv Emission ◽  
Zinc Oxides ◽  
Optically Transparent

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

2010 ◽  
Vol 644 ◽  
pp. 113-116
Author(s):  
L.A. García-Cerda ◽  
Bertha A. Puente Urbina ◽  
M.A. Quevedo-López ◽  
B.E. Gnade ◽  
Leo A. Baldenegro-Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Dip Coating ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Scanning Electron

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

scholarly journals Effect of Annealing Temperature On Iron Doped Titanium Dioxide Thin Films Prepared By Spin Coating Technique

2016 ◽  
Vol 2 (02) ◽  
pp. 61
Author(s):  
Mukhtar Effendi ◽  
Bilalodin B
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Spin Coating Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Technique ◽  
Doped Titanium Dioxide ◽  
Titanium Dioxide Thin Films

<span>Iron (Fe) doped titanium dioxide (TiO<span>2<span>) thin films have been successfully deposited by <span>using spin coating technique. X-ray diffraction (XRD) and Scanning Electron Microscope <span>(SEM) were employed to characterize the microstructure and crystallite morphology of the <span>films. It was indicated that the rutile crystal orientation appears due to increasing annealing <span>temperature of the thin films. Furthermore, increasing annealing temperature of the thin <span>films yielded an increasing of porosity value which is related to the application on gas <span>sensor films.</span></span></span></span></span></span><br /></span></span></span>

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

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