Effect of TiO2 doping on rapid densification of alumina by plasma activated sintering

1996 ◽  
Vol 11 (5) ◽  
pp. 1144-1148 ◽  
Author(s):  
R. S. Mishra ◽  
A. K. Mukherjee ◽  
K. Yamazaki ◽  
K. Shoda
Keyword(s):  
Dielectric Properties ◽  
Full Density ◽  
Activated Sintering ◽  
Sintering Kinetics ◽  
Temperature Range ◽  
Plasma Activated Sintering

The effects of plasma cycle and TiO2 doping on sintering kinetics during plasma activated sintering (PAS) of γ−Al2O3 have been studied in the temperature range of 1473–1823 K. Multiple plasma cycle leads to higher densification. Also, TiO2 doping enhances the sintering kinetics during PAS. In TiO2 doped specimens, near full density was obtained at 1673 K in less than 6 min using multiple plasma cycle. It is suggested that the dielectric properties of a material are critical for the success of the PAS process.

Syntheses of full-density nanocrystalline titanium nitride compacts by plasma-activated sintering of mechanically reacted powder

1998 ◽  
Vol 29 (7) ◽  
pp. 1973-1981 ◽  
Author(s):  
M. Sherif El-Eskandarany ◽  
M. Omori ◽  
T. Hirai ◽  
T. J. Konno ◽  
K. Sumiyama ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Full Density ◽  
Activated Sintering ◽  
Nanocrystalline Titanium ◽  
Plasma Activated Sintering

Thermoelectric Properties of Sb-doped Sintered Mg2Si Fabricated using Commercial Polycrystalline Sources

2009 ◽  
Vol 1166 ◽  
Author(s):  
Naoki Fukushima ◽  
Tsutomu Iida ◽  
Masayasu Akasaka ◽  
Takashi Nemoto ◽  
Tatsuya Sakamoto ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Output Power ◽  
Thermoelectric Properties ◽  
Source Material ◽  
Undoped Sample ◽  
Activated Sintering ◽  
Temperature Range ◽  
Maximum Value ◽  
Significant Difference ◽  
Plasma Activated Sintering

AbstractThe thermoelectric (TE) properties, such as the Seebeck coefficient, the electrical and thermal conductivities, and the output power, of Sb-doped n-type Mg2Si were studied. A commercial polycrystalline source was used for the source material for the Mg2Si. TE elements with Ni electrodes were fabricated by using a monobloc plasma-activated sintering (PAS) technique. Compared with undoped samples, the ZT values of the Sb-doped samples were higher over the whole temperature range in which measurements were made; the maximum value for the Sb doped Mg2Si was 0.72 at 864 K. The TE characteristics of Sb-doped samples were found to be comparable to those of Bi-doped ones, and no significant difference in ZT value was observed between them. Provisional results showed that the maximum value of the output power was 6.75 mW for the undoped sample, 4.55 mW for a 0.5 at% Sb doped sample, and 5.25 mW for a 1 at% Sb doped sample with ΔT = 500 K (between 873 K and 373 K).

Dry sliding wear behavior of Fe3Al alloys prepared by mechanical alloying and plasma activated sintering

Wear ◽  
2010 ◽  
Vol 268 (3-4) ◽  
pp. 473-480 ◽  
Author(s):  
Jian Wang ◽  
Jiandong Xing ◽  
Li Cao ◽  
Wei Su ◽  
Yimin Gao
Keyword(s):  
Mechanical Alloying ◽  
Sliding Wear ◽  
Wear Behavior ◽  
Dry Sliding Wear ◽  
Dry Sliding ◽  
Activated Sintering ◽  
Plasma Activated Sintering

Thermoelectric properties of n-type Cu Bi2S3 materials fabricated by plasma activated sintering

2019 ◽  
Vol 780 ◽  
pp. 35-40 ◽  
Author(s):  
Jian Yang ◽  
Liuxu Yu ◽  
Tingting Wang ◽  
Junnan Yan ◽  
Guiwu Liu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Activated Sintering ◽  
Plasma Activated Sintering

Accelerated Bonding of Magnesium and Aluminum with a CuNi/Ag/CuNi Sandwich Interlayer by Plasma-Activated Sintering

2015 ◽  
Vol 47 (2) ◽  
pp. 631-636 ◽  
Author(s):  
Yiyu Wang ◽  
Mei Rao ◽  
Leijun Li ◽  
Guoqiang Luo ◽  
Qiang Shen ◽  
...  
Keyword(s):  
Activated Sintering ◽  
Plasma Activated Sintering
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