On the carbo-thermal reduction of silica for carbon nano-fibre formation via CVD

2011 ◽  
Vol 1284 ◽  
Author(s):  
Alicja Bachmatiuk ◽  
Felix Börrnert ◽  
Imad Ibrahim ◽  
Bernd Büchner ◽  
Mark H. Rümmeli

ABSTRACTThe formation of carbon nanostructures using silica nanoparticles from quartz substrates as a catalyst in an aerosol assisted chemical vapor deposition process was examined. The silica particles are reduced to silicon carbide via a carbothermal reduction process. The recyclability of the explored quartz substrates is also presented. The addition of triethyl borate improves the efficiency of the carbothermal reduction process and carbon nanotubes formation. Moreover, the addition of hydrogen during the chemical vapor deposition leads to the helical carbon nanostructures formation.

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.


2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.


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