Development of Human IgE Biosensor Using TFBAR Devices with Shear Mode ZnO Piezoelectric Thin Films

2014 ◽  
Vol 1599 ◽  
Author(s):  
Ying-Chung Chen ◽  
Wei-Tsai Chang ◽  
Chien-Chuan Cheng ◽  
Jia-Ming Jiang ◽  
Kuo-Sheng Kao
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Thin Films ◽  
Shear Mode ◽  
X Ray Diffraction ◽  
Piezoelectric Thin Films ◽  
Deposition Parameters ◽  
Tilting Angle ◽  
Film Bulk

ABSTRACTA novel allergy biosensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with shear mode ZnO piezoelectric thin films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO piezoelectric thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle are set by controlling the deposition parameters. The properties of the shear mode ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The resonance frequency of the shear mode is 796.75 MHz. The sensitivity of the shear mode is calculated to be 462.5 kHz·cm2/ng.

Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters

2011 ◽  
Vol 308-310 ◽  
pp. 201-208
Author(s):  
Wei Tsai Chang ◽  
Ying Chung Chen ◽  
Chien Chuan Cheng ◽  
Kuo Sheng Kao ◽  
Re Ching Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Dual Band ◽  
Zno Thin Films ◽  
Pass Band ◽  
Wafer Level ◽  
Dual Mode ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

The Properties of Dual Acceptor Delta-Doped ZnO Thin Films

2015 ◽  
Vol 1805 ◽  
Author(s):  
T N. Oder ◽  
R.C. Gade ◽  
C. Merlo
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Hall Effect Measurements ◽  
Ceramic Targets ◽  
Post Deposition ◽  
Neutral Acceptor

ABSTRACTWe report the investigation of ZnO thin films delta-doped with lithium and phosphorus introduced simultaneously. The films were deposited from high purity ceramic targets of ZnO and Li3PO4 on c-plane sapphire substrates by RF magnetron sputtering. An undoped ZnO film with a low background electron concentration was used as the buffer layer on the sapphire substrate. The doped films were prepared by carrying simultaneous sputtering from the ZnO and Li3PO4 ceramic targets. For uniform doped films, the simultaneous deposition from the ZnO and Li3PO4 was uninterrupted. For the delta-doped films on the other hand, deposition from the ZnO target was uninterrupted while that from the Li3PO4 was interrupted periodically using a shutter. Post-deposition annealing was carried using a rapid thermal processor in O2 at 900 oC for 3 min. Results obtained from photoluminescence spectroscopy measurements at 12 K revealed acceptor-related luminescence peaks at 3.35 eV, possibly due to the transition from exciton bound to a neutral acceptor. The x-ray diffraction 2θ-scans showed a single peak at about 34.4o. Hall effect measurements revealed p-type conductivities with an average Hall concentrations of 3.8 x 1013 cm-3 in uniform doped samples and 1.5 x 1016 cm-3 in delta doped samples. However, in some cases the Hall coefficients had both positive and negative values, making the determination of the carrier type inconclusive. The fluctuation in the carrier type could be due to the lateral inhomogeneity in the hole concentration caused by signal noise impacting the small Hall voltages in the measurements.

Structural and Optical Properties of ZnO Film Precursors for Multilayered Transparent Solar Cell Electrodes

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Deposition Power ◽  
Different Temperatures

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

CONTRASTIVE STUDY ON THE STRUCTURE AND THE ULTRAVIOLET ABSORPTION PROPERTY OF MULTIPLE-DOPED AND ELEMENT-DOPED ZnO THIN FILMS

2017 ◽  
Vol 24 (07) ◽  
pp. 1750089 ◽  
Author(s):  
YUNYUN XU ◽  
TAO ZHANG ◽  
ZHENRONG LIN ◽  
YANFENG TIAN ◽  
SHANDAN ZHOU
Keyword(s):  
Thin Films ◽  
Dominant Role ◽  
Rf Magnetron Sputtering ◽  
Uv Absorption ◽  
Zno Thin Films ◽  
Absorption Property ◽  
X Ray Diffraction ◽  
Absorption Properties ◽  
Contrastive Study ◽  
Doped Zno

Sb2O3- and CeO2-doped ZnO thin films were prepared by RF magnetron sputtering technique. The influence of Sb2O3 and CeO2 on the structure and ultraviolet (UV) absorption properties was studied by X-ray diffraction and UV–Vis spectrophotometry. Results show that multiple doping of films had a prominent effect on the development of crystal grains and the UV absorption property. Ce and Sb exist in many forms in the ZnO film. The multiple-doped films also show enhanced UVA absorption, and the UV absorption peak widens and the absorption intensity increases. Sb plays a dominant role on the structure and UV absorption of ZnO thin films, which are enhanced by Ce.

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