Thermoelectric Properties of Tl-X-Te (X=Pb, Sn, Ge) Systems

2005 ◽  
Vol 886 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTPolycrystalline-sintered samples of Tl2GeTe3, Tl4SnTe3, and Tl4PbTe3 were prepared by a solid-state reaction. Their thermoelectric properties were evaluated at temperatures ranging from room temperature to ca. 700 K by using the measured electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ). Despite their poor electrical properties, the dimensionless figure of merit ZT of all the compounds was relatively high, i.e., 0.74 at 673 K for Tl4SnTe3, 0.71 at 673 K for Tl4PbTe3, 0.29 at 473 K for Tl2GeTe3, due to the very low lattice thermal conductivity of the compounds.

Thermoelectric Properties of La-doped BaSi2 and (Ba,Sr)Si2 Solid Solutions

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kohsuke Hashimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
La Doped

AbstractWe studied the thermoelectric properties of BaSi2 and SrSi2. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The maximum values of the dimensionless figure of merit (ZT) were 0.01 at 954 K for BaSi2 and 0.09 at 417 K for SrSi2. We tried to enhance the ZT values of BaSi2 and SrSi2 by prepareing and characterizing La-doped BaSi2 and (Ba,Sr)Si2 solid solution.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure

2017 ◽  
Vol 31 (28) ◽  
pp. 1750261 ◽  
Author(s):  
Yiping Jiang ◽  
Xiaopeng Jia ◽  
Hongan Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Raw Materials ◽  
Absolute Value ◽  
Dimensionless Figure Of Merit

The skutterudite CoSb[Formula: see text]Te[Formula: see text]Sn[Formula: see text] compound was synthesized successfully by high pressure and high temperature (HPHT) method using Co, Sb, Te and Sn powder as raw materials. The effects of pressure on its structure and the thermoelectric properties are investigated systematically from 300 K to 800 K. The electrical resistivity and the absolute value of the Seebeck coefficient for the sample increases with rising synthetic pressure. The thermal conductivity of the sample decreases with synthetic pressure and temperature rising in the range of 300–800 K. In this study, the maximum dimensionless figure of merit (ZT) value of 1.17 has been achieved at 793 K, 3 GPa for this thermoelectric material.

FEM Analysis on Thermoelectric Properties of Metal/TiO2–x Composites with Random Distribution of Metal Powder

2013 ◽  
Vol 750 ◽  
pp. 130-133
Author(s):  
Katsuhiro Sagara ◽  
Yun Lu ◽  
Dao Cheng Luan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Random Distribution ◽  
The Other ◽  
Dimensionless Figure Of Merit ◽  
Wide Range

Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composites in a wide range of metal volume fractions because Ni has large absolute values of Seebeck coefficient, power factor and dimensionless figure-of-merit compared to the other two metals. It was found that power factor and dimensionless figure-of-merit of thermoelectric composites depended on the balance among electrical resistivity, thermal conductivity and Seebeck coefficient. The results revealed that it is important for M/TiO2–x composites to choose suitable addition metal with high power factor and dimensionless figure-of-merit.

scholarly journals Bipolar doping and thermoelectric properties of Zintl arsenide Eu5In2As6

2021 ◽  
Author(s):  
Naoki Tomitaka ◽  
Yosuke Goto ◽  
Kota Morino ◽  
Kazuhisa Hoshi ◽  
Yuki Nakahira ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Resistivity ◽  
Dimensionless Figure Of Merit ◽  
Recent Developments ◽  
P Type

Zintl compounds exhibit promising thermoelectric properties because of the feasibility of the chemical tuning of their electrical and thermal transport. While most Zintl pnictides are known to show p-type polarity, recent developments in high-performance n-type Mg3Sb2-based thermoelectric materials have encouraged further identification of n-type Zintl pnictides. In this study, we demonstrate the bipolar dopability of the Zintl arsenide Eu5In2As6. The electrical resistivity at 300 K with n-type polarity was decreased to 7.6 x 10^-1 ohmcm using La as an electron dopant. In contrast to the relatively high resistivity of n-type Eu5In2As6, the p-type resistivity at 300 K was decreased to 5.9 x 10^-3 ohmcm with a carrier concentration of 2.8 x 10^20 /cm3 using Zn as a hole dopant. This doping asymmetry is discussed in terms of the weighted mobility of electrons and holes. Furthermore, a very low lattice thermal conductivity of 0.7 W/mK was observed at 773 K, which is comparable to that of the Sb-containing analogue Eu5In2Sb6. The dimensionless figure of merit ZT = 0.29 at 773 K for Zn-doped p-type Eu5In2As6. This study shows that bipolar dopable Eu5In2As6 can be a platform to facilitate a better understanding of the doping asymmetry in Zintl pnictides.

Investigation of Thermoelectric Materials: Substitution effect of Bi on the Ag1-xPb18MTe20 (M = Sb, Bi) (x = 0, 0.14, 0.3)

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substitution Effect ◽  
Dimensionless Figure Of Merit ◽  
The Matrix ◽  
Mass Fluctuation

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Thermoelectric Properties of CoSb3-based Skutterudite Compounds

2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Filling Ratio ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Alloy Scattering ◽  
Skutterudite Compound

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.

Improved thermoelectric properties of gadolinium intercalated compounds GdxTiS2 at the temperaturesfrom 5 to 310 K

2006 ◽  
Vol 21 (2) ◽  
pp. 480-483 ◽  
Author(s):  
D. Li ◽  
X.Y. Qin ◽  
J. Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substantial Decrease ◽  
Intercalated Compounds

The thermoelectric properties of Gd intercalated compounds GdxTiS2 have been investigated at the temperatures from 5 to 310 K. The results indicate that Gd intercalation into TiS2 leads to substantial decrease of both its electrical resistivity and its lattice thermal conductivity κL (κL is lowered by 20% and 46% at 300 K for x = 0.025 and 0.05, respectively). Specially, as compared to the pristine TiS2 the figure of merit ZT of the intercalated compound GdxTiS2 has been improved at all temperatures investigated, and specifically, the ZT value of Gd0.05TiS2 at 300 K is about three times as large as that of TiS2.

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Content ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Air Atmosphere ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Effect Of Oxygen

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.

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