Dominant Factor of Squareness in P-E Hsyteresis Loops of MOCVD-PZT Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Akihiro Sumi ◽  
Hitoshi Morioka ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Chemical Vapor ◽  
Dominant Factor ◽  
Saturation Polarization ◽  
Pzt Films ◽  
Lower Temperature

AbstractThe effects of P-E properties of epitaxially grown rhombohedral Pb(Zr,Ti)O3 film on the film thickness and temperature were systematically investigated. (100)-oriented rhombohedral Pb(Zr0.65Ti0.35)O3 films with 50 - 3200 nm in thickness were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The ratio of the remanent polarization (Pr) to saturation polarization (Psat), the Pr/Psat ratio, at room temperature decreased with decreasing the film thickness. Moreover, the Pr/Psat ratio at 10 K of 180-nm-thick films was smaller than that of 3200-nm-thick film and dropped at lower temperature with increasing the film thickness. These results suggest that the small Pr/Psat ratio of thin film at room temperature is originated to both of small Pr/Psat ratio even at 10K and their drop starting at lower temperature when the temperature increased.

Thickness Dependence and Electrical Properties of Ultrathin PZT Films Grown on SrRuO3/SrTiO3 by MOCVD

1999 ◽  
Vol 596 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Film Thickness ◽  
Vapor Deposition ◽  
Applied Voltage ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Pzt Film ◽  
Polarization Density ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

AbstractEpitaxial Pb(Zr,Ti)O3 (PZT) thin films with various thicknesses ranging from 40 to 400nm were prepared on SrRuO3/SrTiO3 by metalorganic chemical vapor deposition (MOCVD). The dependence of lattice constant on the film thickness and temperature was examined. The PZT films obtained showed ferroelectric hysteresis loops even when film thickness was 40nm. Applied voltage for obtaining high polarization density decreased as film thickness decreased. The 40nm-thick PZT film had the polarization density (Pr) of 38mC/cm2 at an applied voltage (Vc) of 0.7V.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

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