Influence of the Decoration by Dislocations on Grain Boundary Passivation by Hydrogen in Silicon
ABSTRACTIn large grained polycrystalline silicon, the recombination activity of G.B.'s and their passivation by hydrogen is found to be dependent on the decoration by dislocations. Dislocations appear to be preferential paths for in-diffusion, at a depth of a few hundreds of pim's. Similar enhancements of diffusion and passivation exist in grains around dislocations.
1989 ◽
Vol 50
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pp. C6-160-C6-160
1989 ◽
pp. 148-157
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1985 ◽
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pp. 981-996
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1991 ◽
Vol 63
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pp. 443-455
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1983 ◽
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pp. 107
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