Hacroscopic Defects in Epitaxial Silicon on Simox and in Annealed SIMOX

1987 ◽  
Vol 107 ◽  
Author(s):  
A. Mogro-Campero ◽  
N. Lewis ◽  
S.A. Al-Marayati
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Dislocation Density ◽  
Silicon Surface ◽  
Epitaxial Silicon ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Annealing Step ◽  
Order Of Magnitude

AbstractEpitaxial silicon layers of 5¼m were grown on SIMOX wafers. The dislocation density decreases by more than an order of magnitude as a function of distance away from the buried oxide. Shallow pits (about 0.5 urn deep and several um wide) are observed on the epitaxial layer with a density of 1-2 mm2. Their density did not change with various processing variations. A search for the origin of the pits by transmission electron microscopy reveals that they may be associated with regions of irregularly thin and sometimes missing buried oxide, which appear after the usual high temperature SIMOX annealing step. These defective regions in the buried oxide appear to initiate twinned growth in the epitaxial silicon, and are associated with pits at the top epitaxial silicon surface.

TEM investigation of defect reduction and etch pit formation in GaN

2003 ◽  
Vol 798 ◽  
Author(s):  
Angelika Vennemann ◽  
Jens Dennemarck ◽  
Roland Kröger ◽  
Tim Böttcher ◽  
Detlef Hommel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Line Tension ◽  
Threading Dislocations ◽  
Dislocation Loops ◽  
Etch Pits ◽  
Defect Reduction ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Edge Dislocations

ABSTRACTGaN samples of this study were chemically wet etched to gain easier access to the dislocation sturcture. The scanning electron microscopy and transmission electron microscopy investigations revealed four different types of etch pits. After brief etching, several dislocations with screw component showed large etch pits, which may be correlated with the core of the screw dislocation. By means of SiNx micromasking the dislocation density could be reduced by more than one order of magnitude. The reduction of threading dislocations in the SiNx region in GaN grown on 〈0001〉 sapphire is due to bending of the threading dislocations into the {0001} plane, such that they form dislocation loops if they meet dislocations with opposite Burgers vectors. Accordingly, the achievable reduction of the dislocation density is limited by the probability that these dislocations interact. Edge dislocations bend more easily on account of their low line tension. This results in a preferential bending and reduction of dislocations with edge character.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Effect of Coupled Conditions of Thermal Cycle and Dump Environment on Conductivity of 5mol% Yttria Stabilized Zirconia

2013 ◽  
Vol 591 ◽  
pp. 245-248 ◽  
Author(s):  
Jin Feng Xia ◽  
Hong Qiang Nian ◽  
Tao Feng ◽  
Hai Fang Xu ◽  
Dan Yu Jiang
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Thermal Cycle ◽  
Oxygen Sensor ◽  
Yttria Stabilized Zirconia ◽  
Cyclic Change ◽  
Stabilized Zirconia ◽  
Transmission Electron

In some applications such as automotive oxygen sensor, 5mol% Y2O3stabilized zirconia (5YSZ) is generally used because it has both excellent ionic conductivity and mechanical properties. The automotive oxygen sensor would experience a cyclic change from high temperature (engine running) environment to the low temperature damp environment (in the tail pipe when vehicle stops). The conductivity change with coupled conditions of thermal cycle and dump environment in the 5mol%Y2O3ZrO2(5YSZ) system was examined by XRD,Impedance spectroscopy and transmission electron microscopy (SEM) in this paper.

In Situ High-Temperature Transmission Electron Microscopy Observations of the Formation of Nanocrystalline TiC from Nanocrystalline Anatase (TiO2)

1998 ◽  
Vol 4 (3) ◽  
pp. 269-277 ◽  
Author(s):  
A. Agrawal ◽  
J. Cizeron ◽  
V.L. Colvin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Solid Phase ◽  
Anatase Phase ◽  
High Resolution Electron Microscopy ◽  
Rutile Phase ◽  
Transmission Electron ◽  
New Phase

In this work, the high-temperature behavior of nanocrystalline TiO2 is studied using in situ transmission electron microscopy (TEM). These nanoparticles are made using wet chemical techniques that generate the anatase phase of TiO2 with average grain sizes of 6 nm. X-ray diffraction studies of nanophase TiO2 indicate the material undergoes a solid-solid phase transformation to the stable rutile phase between 600° and 900°C. This phase transition is not observed in the TEM samples, which remain anatase up to temperatures as high as 1000°C. Above 1000°C, nanoparticles become mobile on the amorphous carbon grid and by 1300°C, all anatase diffraction is lost and larger (50 nm) single crystals of a new phase are present. This new phase is identified as TiC both from high-resolution electron microscopy after heat treatment and electron diffraction collected during in situ heating experiments. Video images of the particle motion in situ show the nanoparticles diffusing and interacting with the underlying grid material as the reaction from TiO2 to TiC proceeds.

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

A method of precise misorientation determination

2003 ◽  
Vol 36 (6) ◽  
pp. 1319-1323 ◽  
Author(s):  
A. Morawiec
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Resolution ◽  
Standard Procedure ◽  
Good Spatial Resolution ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Achievable Accuracy ◽  
Better Than

A method that improves the accuracy of misorientations determined from Kikuchi patterns is described. It is based on the fact that some parameters of a misorientation calculated from two orientations are more accurate than other parameters. A procedure which eliminates inaccurate elements is devised. It requires at least two foil inclinations. The quality of the approach relies on the possibility to set large sample-to-detector distances and the availability of good spatial resolution of transmission electron microscopy. Achievable accuracy is one order of magnitude better than the accuracy of the standard procedure.

scholarly journals Development of High-Temperature Solders: Contribution of Transmission Electron Microscopy

2015 ◽  
Vol 45 (2) ◽  
pp. 89-94 ◽  
Author(s):  
Jee-Hwan Bae ◽  
Keesam Shin ◽  
Joon-Hwan Lee ◽  
Mi-Yang Kim ◽  
Cheol-Woong Yang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Transmission Electron
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