Ion Beam assisted Deposition of Titanium Nitride

1988 ◽  
Vol 128 ◽  
Author(s):  
G. K. Hubler ◽  
D. Vanvechten ◽  
E. P. Donovan ◽  
R. A. Kant
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Surface Adsorption ◽  
Active Surface ◽  
Sticking Coefficient ◽  
Adsorption Sites ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Ambient Gas

ABSTRACTThe composition of titanium nitride films prepared by ion beam assisted deposition was studied as a function of the partial pressure of N2 gas in the deposition volume, and as a function of the impingement 'ratio of nitrogen ions (500 eV) to evaporated titanium atoms. The amount of nitrogen incorporated from the ambient gas was derived by subtraction of the fraction introduced by the ion beam. It is shown that the primary effects of ion bombardment are an increase in the sticking coefficient and a reduction in the number of active surface adsorption sites.

Investigation of titanium nitride films prepared by ion-beam-assisted deposition at high Ar+/Ti ratio

1992 ◽  
Vol 268 ◽  
Author(s):  
J. H. Hsieh ◽  
D. E. Bush ◽  
R. A. Erck ◽  
G. R. Fenske ◽  
F. A. Nichols
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Preferred Orientation ◽  
Nitrogen Partial Pressure ◽  
Ion Beam Assisted Deposition ◽  
Reduced Nitrogen ◽  
Low Nitrogen

ABSTRACTTitanium nitride films were prepared by reactive ion beam assisted deposition (RIBAD) with Ar+/Ti ratios ranging from 1.0 to 2.3. The compositions, phases and textures of these films were studied by AES and XRD as a function of Ar+/Ti ratio and nitrogen partial pressure. The results indicate that the IBAD titanium nitride films deposited at high Ar+/Ti ratio and low nitrogen partial pressure may have reduced nitrogen concentration, (200) preferred orientation, and possibly contain the Ti2N phase.

Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition

2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Mechanical characterisation of titanium nitride films formed by low- energy ion beam assisted deposition

1996 ◽  
Vol 84 (1-3) ◽  
pp. 439-442 ◽  
Author(s):  
A. Königer ◽  
J.W. Gerlach ◽  
H. Wengenmair ◽  
C. Hammerl ◽  
J. Hartmann ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Mechanical Characterisation ◽  
Ion Beam Assisted Deposition

Computer Simulation of Ion Beam Enhanced Deposition of Titanium Nitride Films

1989 ◽  
Vol 157 ◽  
Author(s):  
Wang Xi ◽  
Zhou Jiankun ◽  
Chen Youshan ◽  
Liu Xianghuai ◽  
Zou Shichang
Keyword(s):  
Computer Simulation ◽  
Titanium Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Ion Source ◽  
Nitrogen Gas ◽  
Titanium Layer ◽  
Adsorption Of Nitrogen ◽  
Nitrogen Ions

ABSTRACTA Monte-Carlo computer simulation has been performed to describe, at atomic level, the growth of titanium nitride films formed by ion beam enhanced deposition (IBED). The simulation is based on a random target, fixed free path of moving particles and binary collisions. An alternate process of deposition of titanium atoms and implantation of nitrogen ions is applied instead of the actual continuous and synchronous process of IBED. According to the actual conditions, the adsorption of nitrogen gas, which is leaked out from the ion source, at the fresh titanium layer surface has been considered. In addition, the change of the composition profile and the density profile during film growth is taken into account. It is demonstrated that the width of the intermixed region between the film and substrate increases with the increase of the atomic arrival ratio, R, of implanted nitrogen ions to deposited titanium atoms. When the titanium deposition rate is low, the nitrogen concentration of the film is relatively insensitive to R, indicating that a dominant contribution to the nitrogen concentration is derived from the nitrogen gas leaked out from the ion source. The results obtained in this study are in agreement with the experimental measurements.

Titanium nitride coatings obtained using new apparatus for ion beam assisted deposition

1991 ◽  
pp. 150-154
Author(s):  
M. Bonelli ◽  
L. Calliari ◽  
M. Elena ◽  
M.A. Ghabashy ◽  
L.A. Guzman ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings ◽  
New Apparatus

Investigation of Titanium Nitride Synthesized by Ion Beam Enhanced Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Zhou Jiankun ◽  
Liu Xianghuai ◽  
Chen Youshan ◽  
Zheng Zhihong ◽  
Huang Wei ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
High Hardness ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Low Friction ◽  
Oxygen Contamination ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Deposited Film

ABSTRACTTitanium nitride films have been synthesized at room temperature by alternate deposition of titanium and bombardment by nitrogen ions with an energy of 40KeV. The component depth profiles and the structure of titanium nitride films were investigated by means of RBS, AES, TEM, XPS and X-ray diffraction. The results showed that titanium nitride films formed by ion beam enhanced deposition (IBED) had columnar structure and were mainly composed of TiN crystallites with random orientation. The oxygen contamination in titanium nitride films prepared by IBED was less than that of the deposited film without nitrogen ion bombardment. It was confirmed that a significant intermixed layer exists at the interface. The thickness of this layer was about 40 nm for the film prepared on iron plate. The mechanical properties of the film have been investigated. The films formed by IBED exhibited high hardness, improved wear resistance and low friction.

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