Correlations Between the Cu‐O Bonding States and the Superconductivity ‐ an Xps Investigation

1989 ◽  
Vol 169 ◽  
Author(s):  
S.C. Han ◽  
D.Z. Liu ◽  
X.M. Xie ◽  
Z.L. Wu ◽  
G.C. Huth
Keyword(s):  
Surface Layer ◽  
Shape Analysis ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Final States ◽  
Bulk Materials ◽  
X Ray ◽  
Line Shape Analysis ◽  
Inner Region

AbstractAuger electron spectroscopy (AES) and core‐level x‐ray photoelectron spectroscopy (XPS) have been used to study the compositional and electronic‐state variations from the contaminated surface layer to the inner region of YBa2Cu3Ox and Bi2(Sr,Ca)n+1Cun02n+4 compounds. The results showed that the carbon‐rich contamination layer in BSCCO is thin and easier to be removed by Ar+ sputtering, indicating a much more stable surface than that of YBCO. This layer is oxygen deficient and contains higher Cu2+ satellites ( 2p3d9 final states) than in the bulk materials. Line‐shape analysis suggests three‐Gaussian features for both Cu 2p3/2 and O Is lines. The 529 eV signal is observed in both YBCO and BSCCO O Is spectra.

Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs

1998 ◽  
Vol 13 (7) ◽  
pp. 1799-1807 ◽  
Author(s):  
J. S. Pan ◽  
C. H. A. Huan ◽  
A. T. S. Wee ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Surface Layer ◽  
Auger Electron Spectroscopy ◽  
Angular Dependence ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Incident Angle ◽  
Ion Beam ◽  
X Ray ◽  
Preferential Sputtering

Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2+ ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2+ ion incident angles, whereas the formation of As–N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of sputtering yield, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. N2+ ion bombardment causes the depletion of As from the surface region because of the preferential sputtering of As from GaAs. The preferential sputtering of As reduces with increasing N2+ ion incident angle. The angular dependent behavior of preferential sputtering of As by 10 keV N2+ ions can be attributed to the angular dependence of GaN surface layer formation.

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Sign in / Sign up

Export Citation Format

Share Document