Imaging of Defects in Cadmium Telluride using High Resolution Transmission Electron Microscopy

1980 ◽  
Vol 2 ◽  
Author(s):  
F. A. Ponce ◽  
T. Yamashita ◽  
R. H. Bube ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cadmium Telluride ◽  
Defect Structure ◽  
Stacking Faults ◽  
Image Contrast ◽  
Transmission Electron

ABSTRACTThe defect structure of cadmium telluride has been investigated using high resolution transmission electron microscopy. The variation of the TEM images with the defocus value is discussed, and defect symmetry considerations are used to correlate the image contrast characteristics with the lattice struc ture. Experimental micrographs of stacking faults and dislocations in the structure are analyzed.

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

2016 ◽  
Vol 858 ◽  
pp. 105-108 ◽  
Author(s):  
Yu Yang ◽  
Jian Qiu Guo ◽  
Ouloide Goue ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Temperatures ◽  
Formation Mechanism ◽  
Stacking Faults ◽  
Generation Process ◽  
X Ray ◽  
Transmission Electron

Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than perfect 4H–SiC crystal at the high temperatures (>1000 °C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults, and experimentally verified it by characterizing the configuration of the bounding partials of the stacking faults on both surfaces. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.

scholarly journals High Resolution Tem Studies of Defects Near Si-SiO2 Interface

1983 ◽  
Vol 31 ◽  
Author(s):  
J. H. Mazur ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Boron Doped ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
One Step ◽  
P Type

ABSTRACTSmall defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

Grain Boundary Dislocation Structure and Motion in an Aluminum Σ=3 [011] Bicrystal

1996 ◽  
Vol 466 ◽  
Author(s):  
D. L. Medlin ◽  
S. M. Foiles ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Twin Boundary ◽  
Defect Structure ◽  
Boundary Dislocation ◽  
Structure And Motion ◽  
Transmission Electron ◽  
Atomistic Calculations

ABSTRACTHigh-resolution transmission electron microscopy (HRTEM) observations are presented of a/3[111] grain-boundary dislocations in an aluminum Σ=3[011] bicrystal. These dislocations are present on both (111) (coherent twin) and (211) (incoherent twin) facets of the bicrystal boundary. The dislocations on the coherent twin facet migrate by a climb process that increases the thickness of the twinned material. These dislocations originate on a Σ=3 (211) incoherent twin boundary where they are closely spaced and dissociated in a wide core configuration. Atomistic calculations of the defect structure and interaction of multiple a/3[111] grain boundary dislocations are discussed.

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