Solidification Interface Instabilities During Zone Melting Recrystallization Processing of Multilayer thin Film Structures

1991 ◽  
Vol 237 ◽  
Author(s):  
Sharon M. Yoon ◽  
Christopher K. Hess ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Phase Change ◽  
Local Heat ◽  
Zone Melting ◽  
Film Structure ◽  
Silicon On Insulator ◽  
Interface Instability ◽  
Property Variation ◽  
Solidification Interface

ABSTRACTThis paper describes a stability analysis of the solidification interface during graphite-strip zone-melting-recrystallization of Silicon-On-Insulator thin film structures. The study focused on instabilities induced by i) variations in the optical properties due to thickness perturbations in the structure and ii) changes in optical properties during phase change. Reflective and emissive interference effects between multilayers play a significant role in the temperature distributions during processing. The presence of a step perturbation imbedded within the film structure affects local heat absorption and resulting temperature profiles. Such disturbances that trigger instabilities at the solid-liquid interface were investigated numerically. Processing speeds which cause interface instability due to optical property variation during phase change were identified.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

The effects of natural convection and conduction in a zone-melting-recrystallization chamber

1993 ◽  
Vol 8 (3) ◽  
pp. 551-557 ◽  
Author(s):  
Bradley D. Heilman ◽  
Matthew A. Marston ◽  
Peter Y. Wong ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thin Film ◽  
Natural Convection ◽  
Thermal Gradient ◽  
Gas Flow ◽  
Thermal Stresses ◽  
Zone Melting ◽  
Film Structure ◽  
Inert Gas ◽  
Stagnant Region

Zone-melting recrystallization (ZMR) with a graphite strip heater is used to improve the material quality of thin film structures for microelectronic applications. The process takes place in a sealed chamber filled with an inert gas such as argon or helium. The effect of natural convection and conduction at the interface between the gas and film structure was studied both numerically and experimentally. Numerical simulations of the temperature profile in the film structure, and the flow pattern and temperature field in the gas were developed. Experimental observations in a scaled setup using a liquid medium verified the flow patterns calculated from the numerical model of the gas flow in the chamber. Results indicated that the gas is stagnant in the region below the strip heater; consequently, conduction from the strip heater to the wafer is prevalent. Outside the stagnant region, natural convection cools the film structure. These two effects combine to create a steeper thermal gradient across the entire wafer which can increase the thermal stresses in the film. The magnitude of this thermal gradient depends strongly on the thermal diffusivity of the gas. The configuration of the strip heater may significantly affect the amount of heat conduction in the stagnant region.

Thin film optical properties in relation to film structure

1979 ◽  
Vol 57 (1) ◽  
pp. 15-32 ◽  
Author(s):  
O. Hunderi
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Structure

Solid-Liquid Interface Instability in the Energy-Beam Recrystallization of Silicon on Insulator

1984 ◽  
Vol 35 ◽  
Author(s):  
El-Hang Lee
Keyword(s):  
Thin Film ◽  
Liquid Interface ◽  
Constitutional Supercooling ◽  
Silicon On Insulator ◽  
Morphological Transition ◽  
Interface Instability ◽  
Energy Beam ◽  
Characteristic Modes ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTAn attempt has been made to systematically sort out the characteristic modes of morphological transition in the energy beam recrystallized thin film silicon on insulating substrates, and to relate them to the mechanisms of solid-liquid interface stability breakdown. Stable to unstable breakdown modes include faceted, cellular, and dendritic configurations as well as transient and composite configurations thereof. These primary modes of breakdown then lead to the secondary modes of breakdown which constitute the sub-boundary formation. The mechanics of the primary (interface) breakdown and that of the secondary (sub-boundary) breakdown must be clearly differentiated in understanding the breakdown process. Constitutional supercooling and absolute supercooling models have been used to explain the various interface instabilities.

Electromodulated optical properties of the silver/pentacene/ITO thin film structure

2008 ◽  
Vol 5 (9) ◽  
pp. 3197-3199
Author(s):  
C. R. Lu ◽  
R. C. Shih ◽  
H. K. Hsu ◽  
W. Y. Chou ◽  
Y. S. Mai ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Structure ◽  
Thin Film Structure

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

OPTIMIZATION OF THIN FILM STRUCTURE Ge2Sb2Te5 FOR OPTICAL SWITCHES

2018 ◽  
Vol 66-2 ◽  
pp. 2-8 ◽  
Author(s):  
N. V. Vishnyakov ◽  
◽  
N. M. Tolkach ◽  
P. S. Provotorov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Film Structure ◽  
Optical Switches ◽  
Thin Film Structure
Sign in / Sign up

Export Citation Format

Share Document