Imaging of Buried Si and Si:Ge Surface Structure Under Amorphous Ge Films by Plan View Transmission Electron Microscopy

1994 ◽  
Vol 332 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Shift ◽  
Room Temperature ◽  
Real Space ◽  
Interfacial Structure ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Reconstructed Surface

ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Transmission electron microscopy of C70 single crystals at room temperature

1992 ◽  
Vol 7 (9) ◽  
pp. 2440-2446 ◽  
Author(s):  
Vinayak P. Dravid ◽  
Xiwei Lin ◽  
Hong Zhang ◽  
Shengzhong Liu ◽  
Manfred M. Kappes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Real Space ◽  
Acceptable Error ◽  
Hexagonal Close Packed ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Hcp Structure

Transmission electron microscopy (TEM) techniques have been employed to study the room temperature solid state form of chromatographically purified C70. Tilting and electron diffraction experiments in three-dimensional reciprocal space, on samples prepared by crystallization from several different solvents, show that C70 crystallites adopt hexagonal close packed (hcp) structure with a = 1.01 ± 0.05 nm and c = 1.70 ± 0.08 nm. The extinctions and observed reflections conform to the P63/mmc space group. High resolution TEM images reveal the molecular order and periodicity associated with C70 crystallites in real space. The experimental results are in agreement with the preliminary computations of crystal structure within acceptable error limits.

Study of ferroelastic behavior and microstructure in polycrystalline LaCoO3 using Transmission Electron Microscopy

2009 ◽  
Vol 3 (1) ◽  
Author(s):  
S. Kell ◽  
M. Tanase ◽  
R.F. Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Defect Density ◽  
Atomic Scale ◽  
Tem Analysis ◽  
Perovskite Type Oxide ◽  
Transmission Electron ◽  
History Of ◽  
Perovskite Type

LaCoO3 is a ferroelastic perovskite-type oxide. It has been shown to undergo creep at room temperature. LaCoO3 responds to stress by changing its domain structure, resulting in formation of spontaneous strain. The microstructure of a sample of polycrystalline LaCoO3 with history of stress was investigated using Transmission Electron Microscopy (TEM). It was compared to an unstrained sample to determine what changes are produced. TEM analysis has shown an increase in defect density as well as the appearance of atomic scale ordering. The causes of the observed ordering and their relation to ferroelastic behavior are explored.

Transmission Electron Microscopy Study of Room Temperature Lasing Epitaxial ZnO Films on Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Wang ◽  
K. K. Fung ◽  
P. Yu ◽  
Z. K. Tang ◽  
G. K. L. Wong ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Substrate Surface ◽  
High Resolution Electron Microscopy ◽  
High Density ◽  
Zno Films ◽  
Boundary Edge ◽  
Plan View ◽  
Transmission Electron

AbstractWe have studied the microstructures of lasing and non-lasing ZnO films on sapphire in plan-view and cross-section by transmission electron microscopy (TEM). While ZnO films in general are made up of cloumnar close-packed c-axis misoriented nanocrystals, the misorientation in nonlasing film, typically 5°, is considerably larger than lasing film, typically less than 1°. A rather high density of pinholes or nanotubes is associated with the highly misoriented films. The misorientation between adjacent grains is taken up by grain boundary dislocations. Room temperature lasing films contain a high density of threading boundary edge dislocations, in excess of 1010 cm−2. But faceting in the columnar nanocrystals is not well developed so that the grain boundaries are not clearly visible. Tilting of (0001) lattice planes between grains originating from substrate surface step and growth fault step, however, has been observed in high resolution electron microscopy (HREM) images.

Scanning and Transmission Electron Microscopy of Human Red Blood Cells

1969 ◽  
Vol 27 ◽  
pp. 44-45
Author(s):  
A.J. Tousimis ◽  
T.R. Padden
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Blood Cells ◽  
Room Temperature ◽  
Type Specimen ◽  
New Combination ◽  
Human Red Blood Cells ◽  
Transmission Electron ◽  
Microscope Slides ◽  
Scanning Electron

The size, shape and surface morphology of human erythrocytes (RBC) were examined by scanning electron microscopy (SEM), of the fixed material directly and by transmission electron microscopy (TEM) of surface replicas to compare the relative merits of these two observational procedures for this type specimen.A sample of human blood was fixed in glutaraldehyde and washed in distilled water by centrifugation. The washed RBC's were spread on freshly cleaved mica and on aluminum coated microscope slides and then air dried at room temperature. The SEM specimens were rotary coated with 150Å of 60:40- gold:palladium alloy in a vacuum evaporator using a new combination spinning and tilting device. The TEM specimens were preshadowed with platinum and then rotary coated with carbon in the same device. After stripping the RBC-Pt-C composite film, the RBC's were dissolved in 2.5N HNO3 followed by 0.2N NaOH leaving the preshadowed surface replicas showing positive topography.

Formation of Dislocation Channels in Neutron Irradiated Molybdenum

1972 ◽  
Vol 30 ◽  
pp. 672-673
Author(s):  
S. Mahajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Channel Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Three Stages ◽  
Two Stages ◽  
Polycrystalline Molybdenum

The evolution of dislocation channels in irradiated metals during deformation can be envisaged to occur in three stages: (i) formation of embryonic cluster free regions, (ii) growth of these regions into microscopically observable channels and (iii) termination of their growth due to the accumulation of dislocation damage. The first two stages are particularly intriguing, and we have attempted to follow the early stages of channel formation in polycrystalline molybdenum, irradiated to 5×1019 n. cm−2 (E > 1 Mev) at the reactor ambient temperature (∼ 60°C), using transmission electron microscopy. The irradiated samples were strained, at room temperature, up to the macroscopic yield point.Figure 1 illustrates the early stages of channel formation. The observations suggest that the cluster free regions, such as A, B and C, form in isolated packets, which could subsequently link-up to evolve a channel.

Transmission Electron Microscopy of an Aluminum-Silver-Stainless Steel Solid State Bond

1985 ◽  
Vol 43 ◽  
pp. 172-173
Author(s):  
M. J. Carr ◽  
J. F. Shewbridge ◽  
T. O. Wilford
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Specimen Preparation ◽  
Dimensional Control ◽  
Tem Analysis ◽  
Metal Parts ◽  
Dissimilar Metal ◽  
Transmission Electron ◽  
Short Time

Strong solid state bonds are routinely produced between physical vapor deposited (PVD) silver coatings deposited on sputter cleaned surfaces of two dissimilar metal parts. The low temperature (200°C) and short time (10 min) used in the bonding cycle are advantageous from the standpoint of productivity and dimensional control. These conditions unfortunately produce no microstructural changes at or near the interface that are detectable by optical, SEM, or microprobe examination. Microstructural problems arising at these interfaces could therefore easily go undetected by these techniques. TEM analysis has not been previously applied to this problem because of the difficulty in specimen preparation. The purpose of this paper is to describe our technique for preparing specimens from solid state bonds and to present our initial observations of the microstructural details of such bonds.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Synthesis and TEM study of Ag–In–(Eu, Ce) ternary approximants

2009 ◽  
Vol 224 (1-2) ◽  
Author(s):  
Kazue Nishimoto ◽  
Miki Muraki ◽  
Ryuji Tamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Transmission Electron

AbstractTernary Ag–In–(Eu, Ce) 1/1 approximants are synthesized and their structures are studied by transmission electron microscopy (TEM). For both the approximants, superlattice spots are clearly observed at room temperature, and the superstructures of the Ag–In–(Eu, Ce) approximants are found to be similar to those of Cd

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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