LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results

1993 ◽  
Vol 335 ◽  
Author(s):  
Y. Bu ◽  
M.C. Lin
Keyword(s):  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atomic Ratio ◽  
Xps Spectra ◽  
X Ray ◽  
Pressure Chemical ◽  
Excimer Laser Irradiation ◽  
Pseudo Potential

AbstractLow-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 Å (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. The He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of ∼100 nm were observed for InN on Si(100).

Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor

1993 ◽  
Vol 335 ◽  
Author(s):  
M. J. Cook ◽  
P. K. Wu ◽  
N. Patibandla ◽  
W. B. Hillig ◽  
J. B. Hudson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fiber Coating ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Carbon Concentrations

AbstractAluminum nitride films were deposited on Si (100) and sapphire (1102) substrates by low pressure chemical vapor deposition using the metalorganic precursor trisdimethylaluminum amide, [(CH3)2AlNH2]3. Depositions were carried out in a cold wall reactor with substrate temperatures between 500 and 700 °C and precursor temperatures between 50 and 80 °C. The films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy and scanning electron microscopy. The films were generally smooth and adherent with colors ranging from transparent to opaque grey. Cracking and spallation were seen to occur at high film thickness. Deposition rates ranged from 20 to 300 Å/min and increased with both precursor and substrate temperature. Carbon concentrations were small, < 5 at. %, while oxygen concentrations were higher and showed a characteristic profile versus depth in the film. High temperature compatibility testing with sapphire/AlN/MoSi2 samples was carried out to determine film effectiveness as a fiber coating in a composite.

SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition

1995 ◽  
Vol 34 (12S) ◽  
pp. 6701 ◽  
Author(s):  
Tsuneaki Ohta ◽  
Shuichi Noda ◽  
Masanori Kasai ◽  
Hirosi Hoga Hirosi Hoga
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Pressure Chemical ◽  
Multilayer Membrane

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 282 ◽  
Author(s):  
I. Golecki ◽  
J. Marti ◽  
F. Reidinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

Carbonization Layer Grown By Acetylene Reaction On Si(100) And (111) Surface Using Low Pressure Chemical Vapor Deposition

2012 ◽  
Author(s):  
Abdul Manaf Hashim ◽  
Kanji Yasui
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Probe Microanalysis ◽  
Crystal Orientation ◽  
Electron Probe ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Bonding State ◽  
Pressure Chemical

Permukaan karbonisasi pada Si(100) dan Si(111) menggunakan acetylene (C2H2) sebagai sumber karbon tunggal dibuat di dalam ruang endapan wap kimia (CVD) bertekanan rendah menggunakan teknik cepat panas. Kebergantungan kristaliniti, orientasi kristal dan keadaan ikatan lapisan karbonisasi ke atas kadar aliran acetylene, tekanan, suhu dan masa telah dievaluasi dengan menggunakan teknik pembelauan X–Ray dan analisis ‘electron probe microanalysis’. Lapisan karbonisasi stoikiometri dengan kristaliniti, orientasi kristal dan keadaan ikatan yang baik dapat dibentuk pada 1100°C dengan kadar aliran C2H2 sebanyak 2 sccm dan tekanan tindak balas pada 0.3 Torr. Kata kunci: Pembelauan X–ray; endapan wap kimia; campuran silikon separa–pengalir Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low–pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X–ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr. Key words: X–ray diffraction; chemical vapor deposition; semiconducting silicon compounds

Epitaxial film growth of chromium dioxide by low pressure chemical vapor deposition using chromium carbonyl

2010 ◽  
Vol 518 (23) ◽  
pp. 6853-6857 ◽  
Author(s):  
Jinwen Wang ◽  
Manjit Pathak ◽  
Xing Zhong ◽  
Patrick LeClair ◽  
Tonya M. Klein ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chromium Dioxide ◽  
Chromium Carbonyl ◽  
Pressure Chemical ◽  
Epitaxial Film Growth

Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Golecki ◽  
F. Reidinger ◽  
J. Marti
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on monocrystalline (100) Si substrates at 750°C, the lowest epitaxial growth temperature reported to date. The films were grown by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus used in this study and the properties of the films.

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