Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor

1993 ◽  
Vol 335 ◽  
Author(s):  
M. J. Cook ◽  
P. K. Wu ◽  
N. Patibandla ◽  
W. B. Hillig ◽  
J. B. Hudson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fiber Coating ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Carbon Concentrations

AbstractAluminum nitride films were deposited on Si (100) and sapphire (1102) substrates by low pressure chemical vapor deposition using the metalorganic precursor trisdimethylaluminum amide, [(CH3)2AlNH2]3. Depositions were carried out in a cold wall reactor with substrate temperatures between 500 and 700 °C and precursor temperatures between 50 and 80 °C. The films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy and scanning electron microscopy. The films were generally smooth and adherent with colors ranging from transparent to opaque grey. Cracking and spallation were seen to occur at high film thickness. Deposition rates ranged from 20 to 300 Å/min and increased with both precursor and substrate temperature. Carbon concentrations were small, < 5 at. %, while oxygen concentrations were higher and showed a characteristic profile versus depth in the film. High temperature compatibility testing with sapphire/AlN/MoSi2 samples was carried out to determine film effectiveness as a fiber coating in a composite.

Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
Jen-Wei Hwang ◽  
Everett C. Phillips ◽  
John F. Evans ◽  
Scott A. Hanson ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical ◽  
Elemental Arsenic

ABSTRACTCyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

2012 ◽  
Vol 711 ◽  
pp. 61-65 ◽  
Author(s):  
Sai Jiao ◽  
Marc Portail ◽  
Jean François Michaud ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Micro Electro Mechanical Systems ◽  
Pressure Chemical

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition

1995 ◽  
Vol 34 (12S) ◽  
pp. 6701 ◽  
Author(s):  
Tsuneaki Ohta ◽  
Shuichi Noda ◽  
Masanori Kasai ◽  
Hirosi Hoga Hirosi Hoga
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Pressure Chemical ◽  
Multilayer Membrane

Chemical Vapor Deposition of Vanadium Oxide Tiiin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Ogie Stewart ◽  
Joan Rodriguez ◽  
Keith B. Williams ◽  
Gene P. Reck ◽  
Narayan Malani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Vanadium Oxide Thin Films ◽  
Deposited Films

AbstractVanadium oxide thin films were grown on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) from the reaction of vanadium(IV) chloride with isopropanol and t-butanol. Films were deposited in the temperature range 250 to 450°C. The as-deposited films were a dark greenish color consistent with formation of a lower oxide of vanadium. Annealing a film deposited on Corning 7059 glass in air converted the material to a yellow film. X-ray diffraction of the yellow film revealed the presence of V2O5. Optical spectra of the films are presented. Glass substrates previously coated with conductive fluorine doped tin oxide were coated with V2O5 and evaluated for electrochromic activity.

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 282 ◽  
Author(s):  
I. Golecki ◽  
J. Marti ◽  
F. Reidinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results

1993 ◽  
Vol 335 ◽  
Author(s):  
Y. Bu ◽  
M.C. Lin
Keyword(s):  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atomic Ratio ◽  
Xps Spectra ◽  
X Ray ◽  
Pressure Chemical ◽  
Excimer Laser Irradiation ◽  
Pseudo Potential

AbstractLow-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 Å (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. The He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of ∼100 nm were observed for InN on Si(100).

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