Investigation of the Characteristics of Ferroelectric Thin Films Deposited by Pulsed Laser Ablation

1994 ◽  
Vol 361 ◽  
Author(s):  
S. Sengupta ◽  
D.P. Vijay ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Secondary Phase ◽  
Ferroelectric Thin Films ◽  
Laser Ablation Method ◽  
Target Composition ◽  
Lower Oxygen

ABSTRACTFerroelectric thin films of barium strontium titanate (BSTO) have been deposited on bare and metallized substrates by pulsed laser ablation method under different oxygen ambients (150 mT and 50 mT). Under an oxygen pressure of 150 mT, the film composition was similar to that of its ablation target composition, viz. Ba0.4TiO3. However, when the films were deposited under the lower oxygen pressure, x-ray diffraction studies showed the presence of a secondary phase. The electrical characteristics of the films were measured to examine the effect of the stoichiometry on the dielectric constant and tunability. The results of this study will be presented.

Fabrication of La2-x Ce x CuO4 Thin Films using Pulsed Laser Ablation Method

2000 ◽  
pp. 912-914 ◽  
Author(s):  
Yasuhiro Matsuo ◽  
Kiyosi Betsuyaku ◽  
Hirosi Katayama-Yoshida ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

c‐axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

1996 ◽  
Vol 68 (11) ◽  
pp. 1582-1584 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ferroelectric Thin Films

scholarly journals Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

2006 ◽  
Vol 89 (3) ◽  
pp. 032901 ◽  
Author(s):  
Zhenxiang Cheng ◽  
Chinna Venkatasamy Kannan ◽  
Kiyoshi Ozawa ◽  
Hideo Kimura ◽  
Xiaolin Wang
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Ablation Method

Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation

2006 ◽  
Vol 320 ◽  
pp. 109-112
Author(s):  
Sayuki Sawa ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Alumina Substrate ◽  
Laser Ablation Method ◽  
Zno Varistors ◽  
532 Nm ◽  
Deposited Films

Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.

C-Axis Oriented Ferroelectric thin Films of PbtiO3 on Silicon Substrate by Pulsed Laser Ablation

1995 ◽  
Vol 397 ◽  
Author(s):  
V. R. Palkar ◽  
S. C. Purandare ◽  
S. P. Pai ◽  
S. Chattopadhyay ◽  
P. R. Apte ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Film Deposition ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Deposition Conditions

ABSTRACTWe are reporting the successful deposition of single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si (100) by pulsed laser deposition. It is shown that the formation of non ferroelectric Pb2Ti2O6 phase at the interface could be avoided by raising the substrate temperature sufficiently high. The film deposition conditions are optimized so as to achieve better ferroelectric properties.

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