Dielectric Measurements On Printed-Wiring And Circuit Boards, Thin Films, And Substrates: An Overview

1995 ◽  
Vol 381 ◽  
Author(s):  
James Baker-Jarvis ◽  
Chriss A. Jones
Keyword(s):  
Thin Films ◽  
Surface Wave ◽  
Transmission Line ◽  
Dielectric Resonators ◽  
Circuit Boards ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Permittivity Measurements ◽  
Open Resonators ◽  
Wave Modes

AbstractA review of the most common methods of permittivity measurements on thin films, printed-wiring and circuit boards, and substrates is presented. Transmission-line techniques, coaxial apertures, open resonators, surface-wave modes, and dielectric resonators methods are examined. The frequency range of applicability and typical uncertainties associated with the methods are summarized.

scholarly journals Dielectric Tunability Properties in (110)-Oriented Epitaxial 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films Prepared by PLD Method

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4771
Author(s):  
Bing Luo ◽  
Yiwen Xu ◽  
Fuzeng Zhang ◽  
Tingting Wang ◽  
Yingbang Yao
Keyword(s):  
Thin Films ◽  
Phase Shifter ◽  
Hysteresis Loops ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Temperature Dependent ◽  
Leakage Currents ◽  
Electrical Field ◽  
Dielectric Tunability ◽  
Diffused Phase Transition

Epitaxial 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) thin films with single-crystal perovskite structure have been grown by pulsed laser deposition (PLD) on the (110) SrRuO3/SrTiO3 substrates. Temperature-dependent dielectric measurements show obvious characteristics of a diffused phase transition. Typical P-E hysteresis loops with a distinct ferroelectric imprint phenomenon are observed in these BZT-BCT thin films with a remnant polarization of 2.0 μC/cm2 and coercive field of 187 kV/cm. Small leakage currents (<1 × 10−6 A/cm2) are obtained in these thin films under an electrical field of 240 MV/m. These BZT-BCT thin films have shown large dielectric tunability values ranging from 75.8% to 85.7%, under a wide temperature range from 200 K to 330 K and a frequency range between 100 Hz and 100 kHz, which shows their good temperature and frequency stability. Such excellent dielectric tunability properties in these (110)-oriented BZT-BCT thin films promise their great potentials in practical phase shifter applications.

Microwave dielectric measurements of fibrous catalyst using transmission line technique in the frequency range of 1-4 GHz

2014 ◽  
Vol 56 (11) ◽  
pp. 2671-2676 ◽  
Author(s):  
Adam Aboutaleb ◽  
George Chi-Tangyie ◽  
Katherine Huddersman ◽  
Chris H Oxley
Keyword(s):  
Transmission Line ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Microwave Dielectric

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

Preferential orientation and relaxation behaviors of CaCu3Ti4O12 thin films in a low frequency range

2017 ◽  
Vol 704 ◽  
pp. 676-682 ◽  
Author(s):  
Kang Sun ◽  
Ling-Fang Xu ◽  
Cong Mao ◽  
Xing Feng ◽  
Jia-Yu Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Preferential Orientation ◽  
Frequency Range

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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