The Effects of Domain Structure on the Electro-Optic Response of Potassium Niobate Thin Films

1996 ◽  
Vol 453 ◽  
Author(s):  
M. J. Nystrom ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Technique ◽  
Multidomain Structure ◽  
Electro Optic ◽  
Domain Reorientation

AbstractEpitaxial potassium niobate films have been deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction of the films deposited on (100) spinel substrates shows (110) and (001) reflections, indicating a multidomain structure. The electro-optic properties of the thin films were measured using a transmission technique. Effective electro-optic coefficients as large as 470 pm/V were observed. The observed electro-optic response was dominated by domain reorientation effects.

Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Composition Range ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Pzt Thin Films ◽  
X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

The Effects Of Substrate Thermal Mismatch on the Domain Structure of MOCVD-Derived Potassium Niobate Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
M. J. Nystrom ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
Thermal Mismatch ◽  
X Ray ◽  
Domain Stabilization ◽  
Domain Variant

ABSTRACTDomain stabilization in epitaxial potassium niobate films deposited by metalorganic chemical vapor deposition was studied. Stabilization was examined for films deposited on substrates with different coefficients of thermal expansion. X-ray diffraction of KNb03 films deposited on (100) MgAl204, (r) A1203, and (100)pseudocubic YAIO3 substrates shows a mixed domain structure consisting of (110) and (001) domains. However, KNb03 thin films deposited under identical conditions on (100) MgO, (100) SrTi03, and (100)pseudocubic LaA103 substrates exhibited only a single domain variant. A direct correlation between (001) domain volume fraction in the as-deposited KNb03 films and calculated strain resulting from thermal mismatch is observed.

Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Yong Kwan Kim ◽  
Shintaro Yokoyama ◽  
Risako Ueno ◽  
Hitoshi Morioka ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Domain Switching ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

AbstractWe performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on epitaxial Pb(Zr0.35Ti0.65)O3 film capacitor structures. Small regions of 300-nm-thick epitaxial Pb(Zr,Ti)O3 thin films with Pt and SrRuO3 top electrodes were measured after applying various numbers of switching cycles of the electric field. Epitaxial Pb(Zr,Ti)O3 thin films were prepared on epitaxial (100)cSrRuO3/(100)SrTiO3 substrates by pulsed-metalorganic chemical vapor deposition. The volume faction of c-domain and remanent polarization was plotted against the number of switching cycles. In the both capacitors, the Vc increased as the switching cycle increased independent of fatigue behavior.

Effects of thermal annealing on the texture of La0.67Sr0.33MnO3 thin films

2001 ◽  
Vol 16 (7) ◽  
pp. 1887-1889 ◽  
Author(s):  
Lamartine Meda ◽  
LaQuita Kennon ◽  
Cristiane Bacaltchuk ◽  
Hamid Garmestani ◽  
Klaus H. Dahmen
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Simple Cubic ◽  
Heat Treated ◽  
Face Centered

Thin films of La0.67Sr0.33MnO3 (LSMO) were prepared at 670 °C on LaAlO3 (LAO) and SrTiO3 (STO) substrates by liquid-delivery metalorganic chemical vapor deposition. X-ray diffraction analysis 2¸/¸ and pole figure scans showed that the films are epitaxial with (001)LSMO//(001)LAO and (001)LSMO//(001)STO. The crystal structure of LSMO/LAO was indexed as face-centered cubic with a double cell and LSMO/STO as simple cubic. Electron microscopy revealed square facets and elongated grain features. Films heat-treated between 700 and 800 °C on LAO resulted in a structural change, while those on STO showed an increase in texture.

Conducting Thin Films of Ruthenium Oxide Prepared by Mocvd

1998 ◽  
Vol 514 ◽  
Author(s):  
P. Hones ◽  
C.-H. Kohli ◽  
R. Sanjinés ◽  
F. Lévy ◽  
T. Gerfin ◽  
...  
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Resistivity Measurement ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Before And After

ABSTRACTConducting thin films of RuO2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa)3) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and fourprobe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c. reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (ρ down to 72 μΩcm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
D.L. Kaiser ◽  
M.D. Vaudin ◽  
L.D. Rotter ◽  
Z.L. Wang ◽  
J.P. Cline ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electron Diffraction ◽  
Harmonic Generation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

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