Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?

1998 ◽  
Vol 532 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Predictive Modeling ◽  
Extended Defects ◽  
Extended Defect ◽  
Experimental Knowledge ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Deactivation

ABSTRACTAccurate modeling of extended defect kinetics is of primary importance for predictive modeling of transient enhanced diffusion (TED). Our previously developed model accurately accounts for extended defects and can be used predictively for TED. Using some experimental knowledge about the distribution of the extended defect population we can simplify our model. We demonstrate that reducing the number of solution variables by one doesn't affect the predictive capabilities of the model for extended defect kinetics and TED. However, some caution has to be used when applying the same principles to modeling of dopant deactivation.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Modeling of Extended Defects in Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J- W. Xu
Keyword(s):  
Low Temperature ◽  
Experimental Work ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Short Time ◽  
Defect Behavior

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

2003 ◽  
Vol 94 (12) ◽  
pp. 7520 ◽  
Author(s):  
E. Lampin ◽  
F. Cristiano ◽  
Y. Lamrani ◽  
A. Claverie ◽  
B. Colombeau ◽  
...  
Keyword(s):  
Extended Defects ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Point and Extended Defect Interactions in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
M. E. Law ◽  
S. K. Earles
Keyword(s):  
Point Defects ◽  
Quantitative Model ◽  
Extended Defects ◽  
Form Complex ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Defect Interactions ◽  
Short Time ◽  
Surface Sink

ABSTRACTTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the defect behavior during short time, low temperature anneals is a key to explaining TED. The surface can play a defining role in the removal of point defects from the bulk, but there is a lot of controversy over the role and strength of the surface sink for point defects. The controversy will be reviewed, and new experimental results will be presented that investigate the role of the surface on TED.

Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Renata A. Camillo-Castillo ◽  
Kevin. S. Jones ◽  
Mark E. Law ◽  
Leonard M. Rubin
Keyword(s):  
Defect Density ◽  
Low Energy ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Interstitial Concentration ◽  
Transmission Electron ◽  
Concentration Peak ◽  
Scale Down

AbstractTransient enhanced diffusion (TED) is a challenge that the semi-conductor industry has been faced with for more than two decades. Numerous investigations have been conducted to better understand the mechanisms that govern this phenomenon, so that scale down can be acheived. {311} type defects and dislocation loops are known interstitial sources that drive TED and dopants such as B utilize these interstitials to diffuse throughout the Si lattice. It has been reported that a two-step anneal on Ge preamorphized Si with ultra-low energy B implants has resulted in shallower junction depths. This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1x1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at 450, 550, 650 and 750°C; the samples were then subjected to a spike RTA at 950°C. The implant damage was analyzed using Quantitative Transmission Electron Microscopy (QTEM). At the low energy Ge preamorphization, little damage is observed. However at the higher energies the microstructure is populated with extended defects. The defects evolve into elongated loops as the preanneal temperature increases. Both the extended defect density and the trapped interstitial concentration peak at a preanneal temperature of 550°C, suggesting that this may be an optimal condition for trapping interstitials.

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