Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Growth Kinetics of an Amorphous Phase Between GaAs and Co

1991 ◽  
Vol 230 ◽  
Author(s):  
F. Y. Shiau ◽  
Y. A. Chang
Keyword(s):  
Amorphous Phase ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Supersaturated Solid Solution ◽  
Parabolic Rate Constant ◽  
Transmission Electron ◽  
Gaas Structure ◽  
Approximate Composition ◽  
Kinetics Of ◽  
State Amorphization

AbstractSolid-state amorphization reaction between GaAs and Co thin-films was investigated by transmission electron micorscopy and Auger electron spectroscopy. Upon annealing of GaAs/Co thin-film couples at 260–300 °C, an amorphous phase was observed to form. The amorphization was attributed to the openness of the GaAs structure relative to the size of the Co atoms. This allows rapid diffusion of Co into the GaAs lattice and promotes the occurrence of SSAR. Annealing at higher temperatures or for longer times led to the formation of a crystalline phase, designated as the μ-phase which was determined to be a metastable supersaturated solid solution of CoAs exhibiting the B31 structure of the approximate composition of Co(Ga. .48As.52). The growth kinetics of both the amorphous phase and the μ-phase are parabolic in nature. The parabolic rate constant is higher for the μ-phase than for the amorphous phase. The activation energies are 1.47 and 1.35 eV, respectively.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Formation of Amorphous Interlayers by Solid–State Diffusion in Ti Thin Films on Si–ge Layers on Silicon and Germanium

1995 ◽  
Vol 379 ◽  
Author(s):  
J.B. Lai ◽  
C.S. Liu ◽  
L.J. Chen ◽  
J.Y. Cheng
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
The Other ◽  
Solid State Diffusion ◽  
Formation Temperature ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicon And Germanium

ABSTRACTThe formation of amorphous interlayers (a–interlayers) by solid–state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin film on germanium and Sil-xGex alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy.Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as–deposited samples. The growth of a–interlayers was found to vary non–monotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with that of the Ti/Si system. The formation mechanism are discussed in terms of thermodynamic and kinetic factors.

Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Phase Transformation in Nitrogen Ambient

1995 ◽  
Vol 402 ◽  
Author(s):  
R. V. Nagabushnam ◽  
S. Sharan ◽  
G. Sandhu ◽  
V. R. Rakesh ◽  
R. K. Singh ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Titanium Silicide ◽  
Titanium Film ◽  
Titanium Disilicide ◽  
Transmission Electron ◽  
Sheet Resistance Measurement ◽  
Kinetics Of

AbstractThe kinetics of the C49 to C54 TiSi2 phase transformation in nitrogen ambient have been investigated in a temperature range from 700 °C to 800 °C for a range of titanium film thicknesses (135 Å to 350 Å) using sheet resistance measurement, Auger electron spectroscopy(AES), Rutherford backscattering spectroscopy(RBS) and transmission electron microscopy(TEM). About 80% of the titanium converts to titanium silicide with the rest converting to titanium nitride. The activation energies obtained for the C49 to C54 transformation in nitrogen ambient are lower, at least by 2–2.25 eV, than that obtained for the transformations occuring either in argon ambient or vacuum environment. This has been explained with a model involving stress state of titanium silicide film with titanium nitride overlayer.

scholarly journals Growth and endoglucanase activity of Acetivibrio cellulolyticus grown in three different cellulosic substrates

1999 ◽  
Vol 30 (4) ◽  
pp. 310-314 ◽  
Author(s):  
Cássia Regina Sanchez ◽  
Clarita Schvartz Peres ◽  
Heloiza Ramos Barbosa
Keyword(s):  
Growth Rate ◽  
Enzyme Activity ◽  
Growth Kinetics ◽  
Specific Growth ◽  
Carbon Sources ◽  
The Other ◽  
Crystalline Cellulose ◽  
Amorphous Cellulose ◽  
Endoglucanase Activity ◽  
Kinetics Of

The growth kinetics of Acetivibrio cellulolyticus grown in medium containing different carbon sources (cellobiose, amorphous or crystalline cellulose) was investigated. The specific growth rate was higher in cellobiose fed cultures than in the presence of the other two substrates. Endoglucanase production was greater in cultures grown on amorphous cellulose; enzyme activity increased during the stationary phase in cultures grown on crystalline cellulose.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Auger Electron Spectroscopy and Its Application to Nanotechnology

2011 ◽  
Vol 19 (2) ◽  
pp. 12-15 ◽  
Author(s):  
S. N. Raman ◽  
D. F. Paul ◽  
J. S. Hammond ◽  
K. D. Bomben
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Chemical Characterization ◽  
Depth Resolution ◽  
Surface Modifications ◽  
Transmission Electron ◽  
Nanoscale Characterization

Over the past decade, the field of nanotechnology has expanded, and the most heavily used nanoscale characterization/imaging techniques have been scanning probe microscopy (SPM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although these high-resolution imaging techniques help visualize nanostructures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications in the first few nanometers can alter the bulk properties of these nanostructures, and conventional characterization techniques, including energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) associated with SEM and TEM are not suited to detecting these surface modifications except in special, favorable specimens. A modern state-of-the-art scanning Auger electron spectroscopy (AES) instrument provides valuable elemental and chemical characterization of nanostructures with a lateral spatial resolution better than 10 nm and a depth resolution of a few nm. In this article we review the technique of scanning AES and highlight its unique analytical capabilities in the areas of nanotechnology, metallurgy, and semiconductors.

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