High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage

2012 ◽  
Vol 1396 ◽  
Author(s):  
Yuichi Minoura ◽  
Naoya Okamoto ◽  
Masahito Kanamura ◽  
Tadahiro Imada ◽  
Toshihiro Ohki ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Turn On ◽  
Cu Film ◽  
Current Voltage ◽  
Type Semiconductor ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTIn this study, we propose copper oxide (CuOx) edge-termination for GaN-based Schottky barrier diodes (SBDs) with low turn-on voltage. CuOx fabricated by thermal oxidization of sputtered Cu film at 275°C consisted mainly of Cu2O which is known as a p-type semiconductor. We applied CuOx edge-termination to GaN SBDs with tantalum (Ta) Schottky electrode which has low work function of 4.25 eV. The experimental results of current-voltage characteristics insisted that CuOx edge-termination structure was effective to increase breakdown voltage of GaN SBDs with keeping low turn-on voltage of 0.29 V at 10 A/cm2.

Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

2004 ◽  
Vol 59 (11) ◽  
pp. 795-798 ◽  
Author(s):  
Güven Çankaya ◽  
Nazım Uçar
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Metal Work Function ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Work Functions ◽  
P Type ◽  
Relationship Of ◽  
Metal Work

We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕb/ϕm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

2021 ◽  
Vol 21 (3) ◽  
pp. 2001-2004
Author(s):  
Seong-Ji Min ◽  
Michael A. Schweitz ◽  
Ngoc Thi Nguyen ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Thermal Sensitivity ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Saturation Current ◽  
Pin Diodes ◽  
Temperature Range ◽  
Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

AN ASSESSMENT ON ELECTRICAL CHARACTERIZATION OF Ni/n-Si SCHOTTKY RECTIFIERS WITH AND WITHOUT Ta2O5 INTERFACIAL OXIDE LAYER

2019 ◽  
Vol 26 (10) ◽  
pp. 1950073 ◽  
Author(s):  
N. NANDA KUMAR REDDY ◽  
P. ANANDA ◽  
V. K. VERMA ◽  
K. RAHIM BAKASH
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Mis Structure ◽  
Schottky Barrier Diodes ◽  
Mis Structures

We have fabricated Ni/[Formula: see text]-Si metal–semiconductor (MS) and Ni/Ta2O5/[Formula: see text]-Si metal-insulator–semiconductor (MIS) Schottky barrier diodes at room temperature and studied their current density–voltage (J–V) and capacitance–voltage (C–V) characteristic properties. The forward bias J–V characteristics of the fabricated MS and MIS devices have been evaluated with the help of the thermionic emission (TE) mechanism. Schottky barrier height (SBH) values of 0.73 and 0.84[Formula: see text]eV and ideality factor values of 1.75 and 1.46 are extracted using J–V measurements for MS and MIS Schottky barrier diodes without and with Ta2O5 interfacial oxide layer, respectively. It was noted that the incorporation of Ta2O5 interfacial oxide layer enhanced the value of SBH for the MIS device because this oxide layer produced the substantial barrier between Ni and [Formula: see text]-Si and this obtained barrier height value is better than the conventional metal/[Formula: see text]-Si (MS) Schottky diodes. The rectification ratio (RR) calculated at [Formula: see text][Formula: see text]V for the MS structure is found to be [Formula: see text] and the MIS structure is found to be [Formula: see text]. Using Chung’s method, the series resistance ([Formula: see text]) values are calculated using [Formula: see text]/[Formula: see text] vs I plot and are found to be 21,603[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 5489[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In addition, [Formula: see text] vs [Formula: see text] plot has been utilized to evaluate the series resistance ([Formula: see text]) values and are found to be 14,064[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 2236[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In conclusion, by analyzing the experimental results, it is confirmed that the good quality performance is observed in Ni/Ta2O5/[Formula: see text]-Si (MIS) type SBD when compared to Ni/[Formula: see text]-Si (MS) type SBD and can be accredited to the intentionally formed thin Ta2O5 interfacial oxide layer between Nickel and [Formula: see text]-type Si.

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

2006 ◽  
Vol 527-529 ◽  
pp. 1175-1178 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
P Type ◽  
The Relationship ◽  
Unipolar Devices ◽  
Theoretical Limitation ◽  
State Resistance ◽  
Floating Layer

4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga’s Figure of Merit (BFOM) has been obtained.

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

Sign in / Sign up

Export Citation Format

Share Document