Composition and Structure of SiCx:H Films Formed by Plasma Immersion ION Implantation From A Methane Plasma

ABSTRACTHydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.