Cross Sectional Transmission Electron Microscopy Study of Obliquely Evaporated Silicon Oxide thin Films
Keyword(s):
Ion Beam
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ABSTRACTThe columnar structure in obliquely evaporated silicon oxide layers was investigated by transmission electron microscope (TEM). For TEM studies of these layers, samples were made by low angle ion-beam thinning of cross-sections, the planes of which were determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5° to 30° (measured from the plane of the substrate), a change from a well–defined columnar structure to a striated structure was observed, for layers evaporated both under “low-rate” and “high-rate” conditions. There is a clear-cut dependence of the orientation of columns (αc) upon the angle of evaporation (α), however deviating from the “tangent rule” (tanαc=2tanα).
1997 ◽
Vol 36
(Part 2, No. 7B)
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pp. L903-L905
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1996 ◽
Vol 27
(5)
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pp. 1347-1352
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2002 ◽
Vol 17
(2)
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pp. 271-274
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1993 ◽
Vol 8
(5)
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pp. 1019-1027
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