Electrical transport in porous silicon from improved complex impedance analysis

2000 ◽  
Vol 638 ◽  
Author(s):  
B. Remaki ◽  
S. Perichon ◽  
V. Lysenko ◽  
D. Barbier

AbstractAn improved analysis of the electrical transport parameters in meso-porous silicon is presented. Our approach is based on a separate contribution of the crystallites and their interconnections to the total impedance of meso-porous silicon layers. Meso-porous silicon morphology exhibits a columnar structure without quantum confinement. The electrical conduction is thus, partially due to the bulk conductivity within continuous paths of crystallites. The samples were realized on 0.02ω-cm p-type Si substrates. Porous silicon layers of 100µm of thickness and 50% of porosity were inserted in Al/SiO2/porous-Si/Si structures. Their electronic transport parameters were determined using complex impedance measurements. A frequency range of 102 - 107 Hz was used allowing an accurate determination of the impedance components. Combined with thermal stimulation, theses measurements provide a powerful tool for the interpretation of basic properties such as the carriers density in the crystallites and the trapping mechanisms. Our results were interpreted in terms of free carriers conduction in partially compensated crystallites prevailing at low frequencies. At high frequencies (above 10 kHz), the electrical conductivity is mainly controlled by hopping transport on localized states in the chaotic porous structure. Finally, the free carriers mobility, evaluated from SCLC measurement is discussed.

2019 ◽  
Vol 33 (05) ◽  
pp. 1950022 ◽  
Author(s):  
Sarit Chakraborty ◽  
S. K. Mandal ◽  
B. Saha

The multiferroic magnetoelectric materials have gained intensive research interest in the recent years due to their prospective applications. In this perspective, the thermally tunable complex impedance, dielectric behavior and room-temperature magnetoelectric coupling of xCo[Formula: see text]Ni[Formula: see text]Fe2O4–(1 - x)PbZr[Formula: see text]Ti[Formula: see text]O3 (x = 0.2, 0.3 and 0.5) nanocomposites have been investigated. A series of samples have been prepared by chemical pyrophoric reaction process. The structural characterization confirms the coexistence of two different types of phases, there is no phase segregation. The temperature-controlled complex impedance analysis reveals that grain boundaries and grain of the nanocomposites are playing a dominating role. The existence of Maxwell–Wagner interfacial polarization of the nanocomposites causes a high dielectric constant at low frequency. The calculated AC conductivity values with frequency at different temperatures follow the Jonscher’s power-law. A small polaronic hopping contributes largely to the conduction process of the decorated composite. The magnetostriction properties lead to the AC and DC magnetic field-dependent magnetoelectric coupling of the nanocomposites. The magnetoelectric coupling coefficient depends on the concentration of the piezomagnetic phase of the composites.


1998 ◽  
Vol 12 (11) ◽  
pp. 433-441 ◽  
Author(s):  
P. S. Rama Sastry ◽  
T. Bhimasankaram ◽  
G. S. Kumar ◽  
G. Prasad

Complex impedance spectra of ferroelectric mixed ceramic system ( Na 0.5 Bi 0.5)1-x Ca x Bi 4 Ti 4 O 15 with x=0, 0.1, 0.3, 0.5, 0.7 and 1 was studied as a function of frequency and temperature in the range 1 KHz to 10 MHz and 30°C to 620°C respectively. Equivalent circuits involving resistive and capacitive elements at different temperatures, activation energies of relaxations and conduction were evaluated using impedance plots. A comparative study of impedance and conductivity facilities an insight in understanding the electrical nature of these electroceramics.


1999 ◽  
Vol 14 (1) ◽  
pp. 120-123 ◽  
Author(s):  
D. J. Wang ◽  
J. Qiu ◽  
Y. C. Guo ◽  
Z. L. Gui ◽  
L. T. Li

Yttrium-doped (Sr0.45Pb0.55)TiO3 ceramics have been studied by complex impedance analysis. As a sort of NTC-PTC composite thermistor, it exhibited a significantly large negative temperature coefficient of resistivity below Tc in addition to the ordinary PTC characteristics above Tc. It is found that the NTC effect in NTC-PTC materials was not originated from the deep energy level of donor (bulk behavior), but from the electrical behavior of the grain boundary. Therefore, the NTC-PTC composite effect was assumed to be a grain boundary effect, and yttrium was a donor at shallow energy level. The NTC-PTC ceramics were grain boundary controlled materials.


Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Banarji Behera ◽  
Pratibindhya Nayak ◽  
Ram Choudhary

AbstractA polycrystalline sample of KCa2Nb5O15 with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (102–106 Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.


2021 ◽  
Vol 21 (11) ◽  
pp. 5707-5713
Author(s):  
M. Ramachandran ◽  
R. Subadevi ◽  
P. Rajkumar ◽  
R. Muthupradeepa ◽  
R. Yuvakkumar ◽  
...  

In the present work, pure nanocrystalline monoclinic Zirconia (ZrO2) has been successfully synthesized and optimized by the modified co-precipitation method. The concentration of raw material has been optimized with the fixed amount of precipitation agent (Potassium hydroxide KOH). The thermal history of the precursor has been examined through TG/DTA analysis. All the samples are subjected to study the structure, fingerprints of the molecular vibrations, and morphology analyses. The representative sample has been analyzed through Transmission Electron Microscope (TEM) and X-ray Photo Electron Spectroscopy (XPS) analyses. The as-prepared sample exhibits the better crystallinity and surface morphology with lesser particle size (190 nm) when the raw material concentration is 0.2 M. The as-prepared ZrO2 filler (0, 3, 6, 9, and 12 wt.%) is spread through the enhanced polymer electrolyte P(S-MMA) (27 Wt.%)-LiClO4 (8 wt.%)-EC + PC (1;1 of 65 wt.%) complex system via solution casting method. The as-synthesized electrolyte films are examined via complex impedance analysis. P(S-MMA) (27 wt.%)-LiCIO4 (8 wt.%)-EC + PC (1 ;1 of 65 wt.%)-6 wt.% of ZrO2 shows the high ionic conductivity 2.35 × 10–3 Scm–1. Temperature-dependent ionic conductivity studies obey the non-linear behavior. The enhanced ZrO2 has been expected to enhance the other electrochemical properties of the lithium secondary battery.


2019 ◽  
Vol 8 (3) ◽  
pp. 234
Author(s):  
Nasr Hadi ◽  
Tajdine Lamcharfi ◽  
Farid Abdi ◽  
Nor-Said Echtoui ◽  
Ahmed Harrach ◽  
...  

<p class="Abstract"><span lang="EN-US">The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu<sub>3-x</sub>Co<sub>x</sub>Ti<sub>4</sub>O<sub>12</sub> (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 <sup>0</sup>C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 <sup>0</sup>C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 <sup>0</sup>C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 <sup>0</sup>C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 <sup>0</sup>C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 <sup>°</sup>C and 1050 <sup>0</sup>C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples.</span></p>


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