Characterization of the DFZ in Silicon Wafers by a Non-Destructive Technique
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AbstractThis paper presents a non-destructive technique for characterizing The Defect Free Zone (DFZ) of silicon wafers. The method consists in measuring the decay of microwave reflection following the creation of excess carriers by a light pulse. For wafers with similar surface passivation we have found a direct correlation between the transient duration and the size of the DFZ. A computer model of the microwave reflection in silicon wafers with different size of DFZ agrees with experimental observation.
1987 ◽
Vol 30
(2)
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pp. 195-203
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1993 ◽
Vol 8
(6S)
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pp. 936-940
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1994 ◽
Vol 173-174
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pp. 171-176
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