Thermoelectric Properties of PbSe Epitaxial Thin Films and PbSe/EuS Heterostructures

ABSTRACTSystematic investigations were performed of the thickness dependences of the thermoelectric properties of PbSe thin films, freshly prepared and exposed to air at room temperature. It is shown that oxidation leads to a sharp change in the thermoelectric properties of the PbSe films including a change in the sign of the dominant carrier type from n-type to p- type at d ≤ 80 nm. Using a two carrier model for thin films (d < 50 nm) and a two-layer model for thick films (d > 50 nm) allows us to give a satisfactory qualitative interpretation of the observed experimental dependences of the thermoelectric properties on the film thickness.

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Surface Layers and Thermoelectric Properties of Vapor-Phase Condensation LAST Pb18Ag2-xSbxTe20 on Mica

Фізика і хімія твердого тіла ◽

10.15330/pcss.16.1.93-97 ◽

2015 ◽

Vol 16 (1) ◽

pp. 93-97

Author(s):

D. M. Freik ◽

B. S. Dzundza ◽

O. B. Kostyuk ◽

V. I. Makovyshyn ◽

R. S. Yavorskiy

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Vapor Phase ◽

High Vacuum ◽

Layer Model ◽

Electrical Parameters ◽

Surface Layers ◽

Mica Substrate ◽

Two Layer Model

The thermoelectric properties of thin films Pb18Ag2-xSbxTe20, obtained by condensation of vapor on the high vacuum on mica substrate are researched. Based on a two-layer model Petrits are founded electrical parameters of surface layers. It is shown that condensates thickness d <1 micron are characterized by improved thermoelectric properties.

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The Thickness Dependence of Thermoelectric Parameters of thin Films Based on Compounds LAST

Фізика і хімія твердого тіла ◽

10.15330/pcss.17.3.368-371 ◽

2016 ◽

Vol 17 (3) ◽

pp. 368-371 ◽

Cited By ~ 1

Author(s):

B.S. Dzundza ◽

O.B. Kostyuk ◽

V.I. Makovyshyn

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

High Vacuum ◽

Thickness Dependence ◽

Layer Model ◽

Electrical Parameters ◽

Surface Layers ◽

Mica Substrate ◽

Two Layer Model ◽

Thermoelectric Parameters

The thermoelectric properties of thin films based on compounds PbSnAgTe, obtained by condensation of vapor on the high vacuum on mica substrate are researched. Based on a two-layer model Petrits are founded electrical parameters of surface layers. It is shown that condensates thickness d < 500 nm are characterized by improved thermoelectric properties.

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Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

Physical Review B ◽

10.1103/physrevb.102.214402 ◽

2020 ◽

Vol 102 (21) ◽

Author(s):

Stephan Geprägs ◽

Björn Erik Skovdal ◽

Monika Scheufele ◽

Matthias Opel ◽

Didier Wermeille ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Properties ◽

Film Thickness ◽

Epitaxial Thin Films ◽

Thin Film Thickness ◽

Precise Control

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Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

Scientific Reports ◽

10.1038/s41598-020-74887-z ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Jose Recatala-Gomez ◽

Pawan Kumar ◽

Ady Suwardi ◽

Anas Abutaha ◽

Iris Nandhakumar ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Bismuth Telluride ◽

Indium Tin Oxide ◽

Seed Layer ◽

Room Temperature ◽

Low Cost ◽

Temperature Dependent ◽

Temperature Heat ◽

Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

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Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

MRS Proceedings ◽

10.1557/opl.2013.380 ◽

2013 ◽

Vol 1507 ◽

Author(s):

Ryosuke Yamauchi ◽

Geng Tan ◽

Daishi Shiojiri ◽

Nobuo Tsuchimine ◽

Koji Koyama ◽

...

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Room Temperature ◽

Pulsed Laser ◽

Film Surface ◽

Transient State ◽

Epitaxial Thin Films ◽

Flat Surfaces ◽

Surface Nanostructure ◽

Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

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Room-temperature Multiferroic Properties of Pb(Zr0.57Ti0.43)O3-Pb(Fe0.67W0.33)O3 Solid-solution Epitaxial Thin Films

Journal of the Korean Physical Society ◽

10.3938/jkps.57.1914 ◽

2010 ◽

Vol 57 (6(1)) ◽

pp. 1914-1918 ◽

Cited By ~ 5

Author(s):

Tae Kwon Song ◽

Daesu Lee ◽

Sang Mo Yang ◽

Younghun Jo

Keyword(s):

Thin Films ◽

Solid Solution ◽

Room Temperature ◽

Epitaxial Thin Films ◽

Multiferroic Properties

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Effect of Grain Size and Film Thickness on the Thermoelectric Properties of Flexible Sb2Te3 Thin Films

Advances in Materials Science and Engineering ◽

10.1155/2019/6954918 ◽

2019 ◽

Vol 2019 ◽

pp. 1-7 ◽

Cited By ~ 12

Author(s):

Pornsiri Wanarattikan ◽

Piya Jitthammapirom ◽

Rachsak Sakdanuphab ◽

Aparporn Sakulkalavek

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Electrical Conductivity ◽

Grain Size ◽

Film Thickness ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Flexible Substrate ◽

Rf Magnetron Sputtering ◽

Mean Free Path

In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.

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Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

Journal of Nanomaterials ◽

10.1155/2013/201017 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

Jyun-Min Lin ◽

Ying-Chung Chen ◽

Chi-Pi Lin

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Power Factor ◽

Room Temperature ◽

Annealing Temperature ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Si Substrates ◽

Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

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Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

MRS Proceedings ◽

10.1557/proc-648-p6.20 ◽

2000 ◽

Vol 648 ◽

Author(s):

D. Tsamouras ◽

G. Palasantzas ◽

J. Th. M. De Hosson ◽

G. Hadziioannou

Keyword(s):

Thin Films ◽

Film Thickness ◽

Room Temperature ◽

Growth Front ◽

Silicon Substrates ◽

Height Distribution ◽

Force Microscopy ◽

Atomic Force ◽

Roughness Amplitude ◽

Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

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