Explosive Crystallization in Eutectic Materials of Phase Change Optical Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Masahiro Okuda ◽  
Hirokazu Inaba ◽  
Shouji Usuda
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
High Velocity ◽  
Quantum Effect ◽  
Optical Memory ◽  
Amorphous Region ◽  
Amorphous Films ◽  
Rapid Crystallization ◽  
Explosive Crystallization ◽  
Eutectic Materials

ABSTRACTThe excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films are discussed. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From these analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the stoichiometric GeSbTe media. Also, the quantum effect on the melting, crystallization and solidification of phase change media has been discussed.

Crystallization in eutectic materials of phase-change optical memory

2003 ◽  
Author(s):  
Masahiro Okuda ◽  
Hirokazu Inaba ◽  
Shouji Usuda
Keyword(s):  
Phase Change ◽  
Optical Memory ◽  
Eutectic Materials

scholarly journals High-field electrical transport in amorphous phase-change materials

2015 ◽  
Vol 118 (13) ◽  
pp. 135707 ◽  
Author(s):  
Matthias Kaes ◽  
Manuel Le Gallo ◽  
Abu Sebastian ◽  
Martin Salinga ◽  
Daniel Krebs
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Electrical Transport ◽  
High Field ◽  
Phase Change Materials

scholarly journals Crystallization processes of Sb100−xZnx (0 ≤ x ≤ 70) amorphous films for use as phase change memory materials

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097151 ◽  
Author(s):  
Yuta Saito ◽  
Masashi Sumiya ◽  
Yuji Sutou ◽  
Daisuke Ando ◽  
Junichi Koike
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Amorphous Films ◽  
Change Memory

scholarly journals Uncovering β-relaxations in amorphous phase-change materials

2020 ◽  
Vol 6 (2) ◽  
pp. eaay6726 ◽  
Author(s):  
Si-Xu Peng ◽  
Yudong Cheng ◽  
Julian Pries ◽  
Shuai Wei ◽  
Hai-Bin Yu ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Amorphous Materials ◽  
Phase Change Materials ◽  
Special Kind ◽  
Relaxation Processes ◽  
Glass Transitions ◽  
Mechanical Spectroscopy ◽  
Characteristic Features ◽  
Β Relaxation

Relaxation processes are decisive for many physical properties of amorphous materials. For amorphous phase-change materials (PCMs) used in nonvolatile memories, relaxation processes are, however, difficult to characterize because of the lack of bulk samples. Here, instead of bulk samples, we use powder mechanical spectroscopy for powder samples to detect the prominent excess wings—a characteristic feature of β-relaxations—in a series of amorphous PCMs at temperatures below glass transitions. By contrast, β-relaxations are vanishingly small in amorphous chalcogenides of similar composition, which lack the characteristic features of PCMs. This conclusion is corroborated upon crossing the border from PCMs to non-PCMs, where β-relaxations drop substantially. Such a distinction implies that amorphous PCMs belong to a special kind of covalent glasses whose locally fast atomic motions are preserved even below the glass transitions. These findings suggest a correlation between β-relaxation and crystallization kinetics of PCMs, which have technological implications for phase-change memory functionalities.

scholarly journals Defects in amorphous phase-change materials

2013 ◽  
Vol 28 (9) ◽  
pp. 1139-1147 ◽  
Author(s):  
Jennifer Luckas ◽  
Daniel Krebs ◽  
Stephanie Grothe ◽  
Josef Klomfaß ◽  
Reinhard Carius ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Image Position

Abstract

Raman Microprobe Analysis of Laser-Induced Microstructures

1985 ◽  
Vol 51 ◽  
Author(s):  
P. M. Fauchet
Keyword(s):  
Spatial Resolution ◽  
Microprobe Analysis ◽  
Pulsed Laser ◽  
Amorphous Films ◽  
Periodic Surface ◽  
Laser Illumination ◽  
Explosive Crystallization ◽  
Raman Microprobe ◽  
Similarities And Differences

ABSTRACTWe study the composition, stress and structure variations across periodic surface undulations produced by pulsed laser illumination of semiconductors, by explosive crystallization of amorphous films, and by laser-assisted CVD. These variations are mapped out with a one micron spatial resolution using a Raman microprobe. Similarities and differences between the three cases are pointed out. These results are also compared to those obtained by deliberately exposing the sample to interfering beams.

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