Characterization of SiC nanowires grown by APCVD using single precursors

2004 ◽  
Vol 832 ◽  
Author(s):  
Dae-Ho Rho ◽  
Jae-Soo Kim ◽  
Dong-Jin Byun ◽  
Jae-Woong Yang ◽  
Jae-Hoon Lee ◽  
...  
Keyword(s):  
Growth Direction ◽  
Nanowire Growth ◽  
Solid Reaction ◽  
Vapor Liquid Solid ◽  
Flow Rates ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Coating Methods ◽  
Temperature Time

ABSTRACTSiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10∼60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.

Direct Growth of SiC Nanorods on Si Using APCVD and Single Precursors

2004 ◽  
Vol 449-452 ◽  
pp. 701-704 ◽  
Author(s):  
Daeho Rho ◽  
Jae Soo Kim ◽  
Dong Jin Byun ◽  
Jae Woong Yang ◽  
Jung Geun Jhin ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Growth Direction ◽  
Flow Rates ◽  
Coating Methods ◽  
Direct Growth ◽  
Temperature Time ◽  
Nanorod Growth

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ~ 60nm diameters and lengths of several micrometers. Nanorod.s diameters and lengths were different by kind of catalysts. Nanorod.s growth scheme was divided by two regions with diameter.s variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod.s diameters and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

2006 ◽  
Vol 6 (11) ◽  
pp. 2598-2602 ◽  
Author(s):  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Bilal Nsouli ◽  
Mohamad Roumie ◽  
Efstathios Polychroniadis ◽  
...  
Keyword(s):  
Single Domain ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Understanding the vapor–liquid–solid mechanism of Si nanowire growth and doping to synthetically encode precise nanoscale morphology

2016 ◽  
Vol 4 (18) ◽  
pp. 3890-3897 ◽  
Author(s):  
Christopher W. Pinion ◽  
Joseph D. Christesen ◽  
James F. Cahoon
Keyword(s):  
Semiconductor Industry ◽  
Semiconductor Nanostructures ◽  
Nanowire Growth ◽  
Top Down ◽  
Vapor Liquid Solid ◽  
Chemical Methods ◽  
Bottom Up ◽  
Si Nanowire ◽  
Vapor Liquid Solid Mechanism ◽  
Nanoscale Morphology

Bottom-up, chemical methods to control the morphology of semiconductor nanostructures are a promising complement to the top-down fabrication techniques that currently dominate the semiconductor industry.

scholarly journals Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5179
Author(s):  
Chuchu Guo ◽  
Laifei Cheng ◽  
Fang Ye ◽  
Qing Zhang
Keyword(s):  
Thermal Stability ◽  
Growth Mechanism ◽  
Emission Spectra ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Good Thermal Stability ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

2005 ◽  
Vol 87 (20) ◽  
pp. 203101 ◽  
Author(s):  
J. C. Harmand ◽  
G. Patriarche ◽  
N. Péré-Laperne ◽  
M-N. Mérat-Combes ◽  
L. Travers ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Gaas Nanowire ◽  
Vapor Liquid
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