Thermal Stability of Tasix-Gaas Schottky Barriers

1987 ◽  
Vol 92 ◽  
Author(s):  
T. E. Haynes ◽  
C. C. Han ◽  
S. S. Lau ◽  
S. T. Picraux ◽  
W. K. Chu
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Physical Characteristics ◽  
Schottky Barriers ◽  
Electrical Characteristics ◽  
Furnace Annealing ◽  
Barrier Heights ◽  
Thermal Stability Of

ABSTRACTSputtered TaSix films on GaAs have been examined as potential refractory Schottky barrier contacts suitable for self-aligned gate fabrication of GaAs MESFETs. The thermal stability of electrical and physical characteristics has been studied following furnace annealing or rapid thermal processing of contacts with compositions near Ta5Si3 (x=06). The electrical characteristics, interface interdiffusion, and evaporation loss of Ga and As through the contact have been examined. The barrier heights of 30-min furnaceannealed contacts were found to increase with temperature over the range 600 to 900°C. The Schottky barrier heights after rapid thermal processing (RTP) of the contacts were fixed at 0.78 eV for temperatures in the range 700 to 900°C. A major finding of this work is that the Schottky barrier contact maintains its integrity even though the equivalent of at least 5 monolayers of Ga and As have decomposed and evaporated through the contact.

Schottky Properties of Tungsten Compounds Refractory Contacts on n-GaAs Fabricated by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
C. S. Park ◽  
J. S. Lee ◽  
J. W. Lee ◽  
J. Y. Kang ◽  
J. Y. Lee
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Gaas Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Ion Beam Assisted Deposition ◽  
Thermal Stability Of

AbstractA low energy ion beam assisted deposition (IBAD) technique has been developed to fabricate refractory W-Si-N films for the application to gate electrode of GaAs metal-semiconductor field effect transistors( MESFETs ). Thermal stability of the IBAD refractory metal/n-GaAs interface was investigated by examining the microstructure and Schottky diode characteristics. The Schottky barrier heights of 0.71, 0.84, and 0.76 eV were obtained after thermal annealing at 850°C for the W/, WN0.27/, and WSi0.3N0.4/GaAs diodes, respectively, and these values are comparable to those of the best results published with conventional reactive sputtering. While some crystalization of the deposit and reaction between film and substrate at the interface were observed with TEM for the W/ and WN/GaAs contacts annealed at 800°, the WSiN film remained amorphous and showed clear interface with the GaAs substrate without significant morphological change. The WS0.3N0.4/GaAs diode showed good thermal stability of Schottky barrier heights with only 20 meV variation in the temperature range between 700 and 850°C, and that is proposed to be due to the stable microstructure.

Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure

2007 ◽  
Vol 121-123 ◽  
pp. 1261-1264 ◽  
Author(s):  
Yong Jin Kim ◽  
Chel Jong Choi ◽  
Soon Young Oh ◽  
Jang Gn Yun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Thermal Processing ◽  
Layer Structure ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Capping Layer ◽  
Lower Sheet ◽  
Thermal Stability Of

In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid Thermal Processing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheet resistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed much better thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top region of thhe NiSi results in improvement of thermal stability.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal Stability of Strained InGaAs/GaAs Single Quantum Wells

1989 ◽  
Vol 160 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C.A. Armiento ◽  
C. Jagannath
Keyword(s):  
Thermal Stability ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Single Quantum ◽  
Furnace Annealing ◽  
Low Dislocation Density ◽  
The Stability ◽  
Thermal Stability Of ◽  
Low Temperature Photoluminescence

AbstractWe present a study of the structural stability of InGaAs/GaAs strained single quantum wells (SQW) grown with a variety of indium compositions and with well widths close to critical thickness values. The samples were grown by molecular beam epitaxy and were subjected to furnace annealing as well as ion implantation followed by rapid thermal annealing. Changes in low temperature photoluminescence linewidths were used to evaluate the stability of strained SQWs. We observed both strain relief, in wide SQWs and strain recovery, in higher indium composition narrow quantum wells which were partially relaxed (low dislocation density) as-grown.

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