scholarly journals A Novel Method of Synthesizing Graphene for Electronic Device Applications

2018 ◽  
Author(s):  
Nierlly Galvão ◽  
Getulio Vasconcelos ◽  
Rodrigo Pessoa ◽  
João Machado ◽  
Marciel Guerino ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Electronic Device ◽  
Laser Energy ◽  
Thermal Decomposition Process ◽  
Physical Chemical ◽  
Device Applications ◽  
Novel Method ◽  
Laser Beam Heating ◽  
Aln Buffer ◽  
Sic Wafer

This article reports a novel and efficient method to synthesize graphene by thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. A CO2 laser beam heating without vacuum or controlled atmosphere was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in form of small islands with quality, density and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibits a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafer, which indicates its potential for electronic device applications.

SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

1999 ◽  
Vol 06 (06) ◽  
pp. 1129-1141 ◽  
Author(s):  
U. STARKE ◽  
J. BERNHARDT ◽  
J. SCHARDT ◽  
K. HEINZ
Keyword(s):  
Silicon Oxide ◽  
Electronic Device ◽  
Defect Density ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
Hydrogen Treatment ◽  
Tunneling Microscopy ◽  
Layer Stacking ◽  
Device Applications ◽  
Sic Wafer

Growth of SiC wafer material, of heterostructures with alternating SiC crystal modifications (polytypes), and of oxide layers on SiC are of importance for potential electronic device applications. By investigation of hexagonal SiC surfaces the importance of atomic surface structure for control of the respective growth processes involved is elucidated. Different reconstruction phases prepared by ex situ hydrogen treatment or by Si deposition and annealing in vacuum were analyzed using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) crystallography. The extremely efficient dangling bond saturation of the SiC(0001)-(3×3) phase allows step flow growth for monocrystalline homoepitaxial layers. A switch to cubic layer stacking can be induced on hexagonal SiC(0001) samples when a [Formula: see text] phase is prepared. This might serve as seed for polytype heterostructures. Finally, we succeeded in preparing an epitaxially well matching silicon oxide monolayer with [Formula: see text] periodicity on both SiC(0001) and SiC[Formula: see text]. This initial layer promises to facilitate low defect density oxide films for MOS devices.

scholarly journals A Novel Method of Synthesizing Graphene for Electronic Device Applications

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1120 ◽  
Author(s):  
Nierlly Galvão ◽  
Getúlio Vasconcelos ◽  
Rodrigo Pessoa ◽  
João Machado ◽  
Marciel Guerino ◽  
...  
Keyword(s):  
Electronic Device ◽  
Device Applications ◽  
Novel Method

scholarly journals Topological electronics

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert
Keyword(s):  
Information Processing ◽  
Physical Properties ◽  
Materials Science ◽  
Electronic Device ◽  
Condensed Matter ◽  
Topological Phases ◽  
Applied Physics ◽  
New Paradigm ◽  
Topological Materials ◽  
Device Applications

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.

scholarly journals Thermal behavior and decomposition kinetics of rifampicin polymorphs under isothermal and non-isothermal conditions

2010 ◽  
Vol 46 (2) ◽  
pp. 343-351 ◽  
Author(s):  
Ricardo Alves ◽  
Thaís Vitória da Silva Reis ◽  
Luis Carlos Cides da Silva ◽  
Silvia Storpírtis ◽  
Lucildes Pita Mercuri ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Thermal Behavior ◽  
Melting Process ◽  
Decomposition Process ◽  
Stable Form ◽  
Thermal Decomposition Process ◽  
Mean Values ◽  
Conversion Level ◽  
Polymorphic Forms ◽  
Crystalline Forms

The thermal behavior of two polymorphic forms of rifampicin was studied by DSC and TG/DTG. The thermoanalytical results clearly showed the differences between the two crystalline forms. Polymorph I was the most thermally stable form, the DSC curve showed no fusion for this species and the thermal decomposition process occurred around 245 ºC. The DSC curve of polymorph II showed two consecutive events, an endothermic event (Tpeak = 193.9 ºC) and one exothermic event (Tpeak = 209.4 ºC), due to a melting process followed by recrystallization, which was attributed to the conversion of form II to form I. Isothermal and non-isothermal thermogravimetric methods were used to determine the kinetic parameters of the thermal decomposition process. For non-isothermal experiments, the activation energy (Ea) was derived from the plot of Log β vs 1/T, yielding values for polymorph form I and II of 154 and 123 kJ mol-1, respectively. In the isothermal experiments, the Ea was obtained from the plot of lnt vs 1/T at a constant conversion level. The mean values found for form I and form II were 137 and 144 kJ mol-1, respectively.

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