Cellular Imaging with Structural and Mechanical Alterations Against External Stimuli Using Scanning Acoustic Microscopy

2021 ◽  
Author(s):  
Katsutoshi Miura ◽  
Yasuko Fukushi
Keyword(s):  
Cell Size ◽  
Anticancer Drugs ◽  
Time Lapse ◽  
Acoustic Microscopy ◽  
Digital Data ◽  
Cellular Damage ◽  
Scanning Acoustic Microscopy ◽  
Prolonged Incubation ◽  
Heat Effects ◽  
External Stimuli

Cells receive external stimuli to incur structural and functional damages. On scanning acoustic microscopy (SAM), speed-of-sound (SOS), attenuation-of-sound (AOS), and thickness values are plotted on the screen to create cellular images, which are related to stiffness, viscosity, and cell size, respectively. The obtained digital data compared using statistical analysis. We aimed to investigate the effects of anticancer drugs, acidic fluids, and heat effects on the cells by using SAM. Anticancer drug cisplatin induced cancer cell apoptosis/necrosis and regeneration in culture, causing elevated SOS, reduced AOS, and thickness. During a more prolonged incubation, the SAM values fluctuated differently between the cisplatin-treated and untreated cells. The tannic and acetic acid and microwave stimuli induced SOS and AOS elevations. These stimuli altered the cell size, number, differentiation, viscosity, and stiffness, which corresponded well to the fluctuation of the SOS and AOS values after incubation. Different anticancer drugs interacted with cancer cells to induce the characteristic alterations of the SAM values. These structural and mechanical alterations induced in cells was difficult to observe on light microscopy. Cellular damages were statistically compared between different stimuli and time-lapse cellular changes were observed using a SAM analysis. SAM is a useful modality to evaluate cellular damage.

scholarly journals Cellular Imaging with Structural and Mechanical Alterations Against External Stimuli Using Scanning Acoustic Microscopy

2021 ◽  
Author(s):  
Katsutoshi Miura ◽  
Yasuko Fukushi
Keyword(s):  
Cell Size ◽  
Anticancer Drugs ◽  
Time Lapse ◽  
Acoustic Microscopy ◽  
Digital Data ◽  
Cellular Damage ◽  
Scanning Acoustic Microscopy ◽  
Prolonged Incubation ◽  
Heat Effects ◽  
External Stimuli

Cells receive external stimuli to incur structural and functional damages. On scanning acoustic microscopy (SAM), speed-of-sound (SOS), attenuation-of-sound (AOS), and thickness values are plotted on the screen to create cellular images, which are related to stiffness, viscosity, and cell size, respectively. The obtained digital data compared using statistical analysis. We aimed to investigate the effects of anticancer drugs, acidic fluids, and heat effects on the cells by using SAM. Anticancer drug cisplatin induced cancer cell apoptosis/necrosis and regeneration in culture, causing elevated SOS, reduced AOS, and thickness. During a more prolonged incubation, the SAM values fluctuated differently between the cisplatin-treated and untreated cells. The tannic and acetic acid and microwave stimuli induced SOS and AOS elevations. These stimuli altered the cell size, number, differentiation, viscosity, and stiffness, which corresponded well to the fluctuation of the SOS and AOS values after incubation. Different anticancer drugs interacted with cancer cells to induce the characteristic alterations of the SAM values. These structural and mechanical alterations induced in cells was difficult to observe on light microscopy. Cellular damages were statistically compared between different stimuli and time-lapse cellular changes were observed using a SAM analysis. SAM is a useful modality to evaluate cellular damage.

Counterfeit Parts Recognition and Detection for Failure Analysts

2010 ◽  
Author(s):  
Katherine V. Whittington
Keyword(s):  
Thermal Cycle ◽  
Visual Inspection ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
3D Measurement ◽  
X Ray ◽  
Wide Range ◽  
Electronic Parts ◽  
Testing Awareness

Abstract The electronics supply chain is being increasingly infiltrated by non-authentic, counterfeit electronic parts, whose use poses a great risk to the integrity and quality of critical hardware. There is a wide range of counterfeit parts such as leads and body molds. The failure analyst has many tools that can be used to investigate counterfeit parts. The key is to follow an investigative path that makes sense for each scenario. External visual inspection is called for whenever the source of supply is questionable. Other methods include use of solvents, 3D measurement, X-ray fluorescence, C-mode scanning acoustic microscopy, thermal cycle testing, burn-in technique, and electrical testing. Awareness, vigilance, and effective investigations are the best defense against the threat of counterfeit parts.

Failure Analysis of Broken Stitch Bonds in TSSOP Packages Using Scanning Acoustic Microscopy (SAM) and Time Domain Reflectometry (TDR)

2004 ◽  
Author(s):  
Bilal Abd-AlRahman ◽  
Corey Lewis ◽  
Todd Simons
Keyword(s):  
Failure Analysis ◽  
Mechanical Stress ◽  
Time Domain ◽  
Open Circuit ◽  
Time Domain Reflectometry ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Root Cause ◽  
Analysis Application

Abstract A failure analysis application utilizing scanning acoustic microscopy (SAM) and time domain reflectometry (TDR) for failure analysis has been developed to isolate broken stitch bonds in thin shrink small outline package (TSSOP) devices. Open circuit failures have occurred in this package due to excessive bending of the leads during assembly. The tools and their specific application to this technique as well as the limitations of C-SAM, TDR and radiographic analyses are discussed. By coupling C-SAM and TDR, a failure analyst can confidently determine whether the cause of an open circuit in a TSSOP package is located at the stitch bond. The root cause of the failure was determined to be abnormal mechanical stress placed on the pins during the lead forming operation. While C-SAM and TDR had proven useful in the analysis of TSSOP packages, it can potentially be expanded to other wire-bonded packages.

Stacked Die Analysis Using C-mode Scanning Acoustic Microscope

2005 ◽  
Author(s):  
Li Na ◽  
Jawed Khan ◽  
Lonnie Adams
Keyword(s):  
Data Acquisition ◽  
Image Interpretation ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Acoustic Microscope ◽  
Analysis Mode ◽  
Scanning Acoustic Microscope

Abstract For stacked die package delamination inspection using C-mode acoustic microscope, traditional interface and thorough scan techniques cannot give enough of information when the delamination occurs in multi-interfaces, and echoes from adjacent interfaces are not sufficiently separated from each other. A thinner thickness in the stacked-die package could complicate C-mode scanning acoustic microscopy (CSAM) analysis and sometimes may lead to false interpretations. The first objective of this paper is to briefly explain the CSAM mechanism. Based on that, some of the drawbacks of current settings in detecting the delamination for stacked-die packages are presented. The last objective is to introduce quantitative B-scan analysis mode (Q-BAM) and Zip-Slice technologies in order to better understand and improve the reliability of detecting the delamination in stacked-die packages. Therefore, a large portion of this paper focuses on the Q-BAM and Zip-Slice data acquisition and image interpretation.

Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

2015 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Stress Analysis ◽  
Rayleigh Waves ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Through Silicon Vias ◽  
Stress Anisotropy ◽  
Silicon Vias ◽  
Ic Technology ◽  
Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

Sign in / Sign up

Export Citation Format

Share Document