scholarly journals Assessing the impact of front grid metallization pattern on the performance of silicon solar cells

2021 ◽  
Author(s):  
Saba Siraj ◽  
Sofia Akbar Tahir ◽  
Adnan Ali
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Contact Resistance ◽  
Silicon Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Research Work ◽  
Maximum Efficiency ◽  
Silicon Solar Cells ◽  
The Impact

Abstract The aim of this research work was to assess the impact of front and rear grid metallization pattern on the performance of silicon solar cells. We have investigated the effect of front grid metallization design and geometry on the open-circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (ŋ) of silicon solar cells by using Griddler 2.5 simulation program. We used different number of metal fingers ranging from 80–120 having width of 60 µm and different number of busbars ranging from 1–5 busbars on the front and rear side of solar cells for optimization. We have also calculated the efficiency and fill factor at different values of front contact resistance ranging from (0.1–100) mohm-cm2, front and rare layer sheet resistances ranging from (60–110) ohm/sq and different edge gaps. We found that the maximum efficiency and fill factor was obtained with those parameters, when front and rare contact resistances were taken as same. We have designed an optimized silicon solar cell with 115 number of fingers, 4 busbars, front and rare contact resistance of 0.1 mohm-cm2 and front and rare layer sheet resistance of 60 ohm/sq. In this way we were able to successfully optimize the silicon solar cell having efficiency and fill factor of 19.49 % and 81.36 % respectively, for our best optimized silicon solar cell.

scholarly journals Optimization of Antireflection Coating Design Using PC1D Simulation for c − Si Solar Cell Application

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3132
Author(s):  
Maruthamuthu Subramanian ◽  
Omar M. Aldossary ◽  
Manawwer Alam ◽  
Mohd Ubaidullah ◽  
Sreedevi Gedi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Single Layer ◽  
Antireflection Coating ◽  
Silicon Solar Cells ◽  
Refractive Indices ◽  
Solar Cell Application ◽  
The Impact

Minimizing the photon losses by depositing an anti-reflection layer can increase the conversion efficiency of the solar cells. In this paper, the impact of anti-reflection coating (ARC) for enhancing the efficiency of silicon solar cells is presented. Initially, the refractive indices and reflectance of various ARC materials were computed numerically using the OPAL2 calculator. After which, the reflectance of SiO2,TiO2,SiNx with different refractive indices (n) were used for analyzing the performance of a silicon solar cells coated with these materials using PC1D simulator. SiNx and TiO2 as single-layer anti-reflection coating (SLARC) yielded a short circuit current density (Jsc) of 38.4 mA/cm2 and 38.09mA/cm2 respectively. Highest efficiency of 20.7% was obtained for the SiNx ARC layer with n=2.15. With Double-layer anti-reflection coating (DLARC), the Jsc improved by ∼0.5 mA/cm2 for SiO2/SiNx layer and hence the efficiency by 0.3%. Blue loss reduces significantly for the DLARC compared with SLARC and hence increase in Jsc by 1 mA/cm2 is observed. The Jsc values obtained is in good agreement with the reflectance values of the ARC layers. The solar cell with DLARC obtained from the study showed that improved conversion efficiency of 21.1% is obtained. Finally, it is essential to understand that the key parameters identified in this simulation study concerning the DLARC fabrication will make experimental validation faster and cheaper.

scholarly journals Effects of the Boron-Doped p+Emitter on the Efficiency of the n-Type Silicon Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Eun-Young Kim ◽  
Jeong Kim
Keyword(s):  
Solar Cell ◽  
Contact Resistance ◽  
Doping Level ◽  
Silicon Solar Cell ◽  
Doping Concentration ◽  
Boron Concentration ◽  
Short Circuit ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Type Silicon

The optimum structure of the p+emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+emitter was varied in the range of1×1017and2×1022 atoms/cm3while maintaining the base doping concentration at2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC) of the cell increased up to 0.525 V and then was nearly saturated atNB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC) began to decrease atNB>1×1019 atoms/cm3due to the increase of the surface recombination loss, and without considering the variation of the contact resistance along the emitter doping level, the maximum efficiency of the cell was obtained at aroundNB=5×1018 atoms/cm3. While the contact resistance of the electrode decreases with the increase of the doping concentration in the p+emitter, and with consideration of the variation of the contact resistance, the optimum value ofNBfor maximum efficiency shifted to the higher doping level.

scholarly journals The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

2021 ◽  
Vol 24 (1) ◽  
pp. 70
Author(s):  
Omar Ghanim Ghazal ◽  
Ahmed Waleed Kasim ◽  
Nabeel Zuhair Tawfeeq
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Structural Parameters ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
The Impact

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

scholarly journals Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells

RSC Advances ◽  
2019 ◽  
Vol 9 (40) ◽  
pp. 23261-23266 ◽  
Author(s):  
HyunJung Park ◽  
Soohyun Bae ◽  
Se Jin Park ◽  
Ji Yeon Hyun ◽  
Chang Hyun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Silicon Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

The efficiency of silicon solar cell with poly-Si/SiOx passivating contact was improved by etching of poly-Si which improves short circuit current density without affecting passivation quality and fill factor.

A Vertical PN Junction Utilizing the Impurity Photovoltaic Effect for the Enhancement of Ultra-thin Film Silicon Solar Cells

2013 ◽  
Vol 1536 ◽  
pp. 39-44 ◽  
Author(s):  
D. J. Paez ◽  
E. Huante-Ceron ◽  
A. P. Knights
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Maximum Efficiency ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Pn Junction ◽  
The Impact ◽  
Ultra Thin Film

ABSTRACTWe report a preliminary study on the influence of indium doping on ultra-thin film silicon solar cells. The design of the cell reported here is such that it should elucidate the impact of the indium dopant, which is concentrated in the thin film. Indium, a deep level in silicon (0.157 eV above the valence band), acts as a p-type dopant and a sensitizer. Absorption through sub-bandgap transitions is expected based on the previously reported Impurity PhotoVoltaic (IPV) Effect [1]. It is proposed that the implementation of a novel vertical PN junction configuration together with the IPV effect enhances the efficiency of ultra-thin solar cells. The most efficient cell fabricated to date, in our research group, has a conversion efficiency of 4.3 % (active silicon thickness of 2.5 μm), a short-circuit current density of 14.9 mA/cm2 and an open-circuit voltage of 0.51 V under 1 sun illumination. The cell has not been optimized with any type of light trapping technique and 11.24 % of the cell surface is covered by the metal contacts. Numerical simulation indicates that for the geometry used, the maximum efficiency that may be expected is 9.8 % (compared to the 4.3 % measured).

Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells: Phosphorous Doping and Contact Opening Process

2007 ◽  
Vol 124-126 ◽  
pp. 923-926 ◽  
Author(s):  
Sang Wook Park ◽  
Eun Chel Cho ◽  
Jae Hee Yu ◽  
Dea Won Kim
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Fill Factor ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Industrial Process ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Heavily Doped ◽  
Opening Process

In this work, we report on the last investigation of POP (selective Phosphorous doping and contact Opening Process) in crystalline silicon solar cells. For the industrial solar cells, it must be very highly doped to decrease the high-contact resistance and not very shallow so that it is not perforated during paste firing, which would short-circuit the junction. We made improvement involves making separate diffusions for the different regions since the requirements are so different: a heavily doped and thick region under the contacts, a thin and lowly doped region under the passivating layer. Furthermore we opened the metal contact area to make a narrow grid lines simultaneously. As a result we could increase fill factor and reduce contact resistance by industrial process.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Tchouadep Guy Serge ◽  
Zouma Bernard ◽  
Korgo Bruno ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Experimental Studies ◽  
High Energy ◽  
High Energy Particle ◽  
Proton Radiation ◽  
Electrical Parameters ◽  
Carrier Distribution

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Silicon Solar Cells ◽  
Shunt Resistance ◽  
Cell Parameters ◽  
Ito Film ◽  
Ito Thin Films ◽  
Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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