scholarly journals Design,Simulation And Analysis of Junction Version Multi-Fin FINFET

Author(s):  
Srinivasa Rao K ◽  
Vishnu Vandana P

Abstract This paper presents a 3-D statistical simulation study of Multi-fin junction FinFET for different technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their corresponding Electrical parameters like on current (Ion), off current (Ioff), threshold voltage (Vth) are reported in the paper and also RF/Analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd) are reported. And also parameters like Electric field (E), Electron density (ne), Electron mobility (µ) which are measured across the device length are simulated. The proposed structure showed performance improvement in all the parameters when the technology node is decreased.

2020 ◽  
Vol 12 ◽  
Author(s):  
Vijay Kumar Sharma

Background: The increased demand of battery operated portable systems boost up the field of low power VLSI design. Integrated circuits are enhancing the performance of the systems in terms of lesser area requirement, higher functionality and faster response at lower technology nodes. The applied power supply and threshold voltage of the individual device is scaled down at lower technology node. Scaling of the threshold voltage of the devices raises the issue of leakage current. Objective: Leakage current should be made recessive with the continuous scaling of technology nodes. Methods: Various leakage current mitigation methods had been employed to reduce the leakage current at different abstraction levels. This review paper demonstrates the survey of systematic arrangement of device scaling, leakage power, its causes, and various methods to overcome the leakage current at circuit level design. Results: 3-input NAND (NAND3) gate is designed and simulated at 22 nm technology node on HSPICE tool and analyzed for comparison of different leakage reduction techniques. Conclusion: INDEP approach is the most effective approach to reduce the leakage current and improving the reliability of the circuits followed by DTCMOS technique as compared to other available techniques.


2020 ◽  
Vol 9 (5) ◽  
pp. 2134-2140
Author(s):  
Wan Mohamad Izzat Wan Zain ◽  
Syed Abdul Mutalib Al Junid ◽  
Mohd Faizul Md Idros ◽  
Abdul Hadi Abdul Razak ◽  
Fairul Nazmie Osman ◽  
...  

Memristor is a non-volatile new technology memory where the data stored as a resistance which the performance is influenced by the stateful logic design. Therefore, this study is an attempt to investigate the performance of the MAGIC NOR Gate stateful logic design using LTSPICE and targeted to 2 bits memory application. The objective is to investigate the performance of memristor based stateful logic logic design and schematics for memory application. Furthermore, the study been carried out by implementing the MAGIC NOR gate stateful logic schematic, then simulate the design in order to see the effects of performance including the electrical parameters compared to the others. Evidently, the improvement of MAGIC NOR gate contributes in reducing the number of NOR gate and CMOS count. Besides, the MAGIC NOR gates takes parallel inputs topology and eliminate the threshold voltage compared to IMPLY logic. Nevertheless, larger numbers of memristor required to stable the output consistency in MAGIC NOR gate schematic. 


2018 ◽  
Vol 13 (3) ◽  
pp. 1-8
Author(s):  
Camila Alves ◽  
Denis Flandre ◽  
Michelly De Souza

This paper presents an evaluation of mismatching impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.


NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950128 ◽  
Author(s):  
Biswajit Jena ◽  
Sidhartha Dash ◽  
Soumya Ranjan Routray ◽  
Guru Prasad Mishra

Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their strong electrostatic control over the channel. The electrostatic controllability can be enhanced further by applying some gate engineering technique to the existing GAA structure. This paper investigates the effect of inner gate (core gate) on the electrostatic performance of conventional GAA MOSFET. The inner gate engineering increases both the electrostatic control and packing density of GAA MOSFET. In this paper, we have presented an inner-gate-engineered (IGE) GAA MOSFET and inspected its advantages over conventional counterparts. The proposed structure exhibits higher [Formula: see text] ratio, low threshold voltage and improved RF performances as compared to the conventional structure. Analytic simulation has been carried out for numerous figures of merit (FOMs) for different technology nodes.


VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 425-429 ◽  
Author(s):  
E. Amirante ◽  
G. Iannaccone ◽  
B. Pellegrini

We have performed a three-dimensional statistical simulation of the threshold voltage distribution of deep submicron nMOSFETs, as a function of gate length, doping density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare our results with statistical simulations presented in the literature, and show that essentially only the vertical distribution of dopants has an effect on the standard deviation of the threshold voltage.


2004 ◽  
Vol 57 (4) ◽  
pp. 358-365 ◽  
Author(s):  
Madhu Mazumdar ◽  
Alex Smith ◽  
Lawrence H. Schwartz

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 485-492 ◽  
Author(s):  
M. Heyns ◽  
W. Tsai

AbstractOver the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the performance of CMOS devices. This is clearly evidenced in the International Technology Roadmap for Semiconductors (ITRS), which indicates the requirements and technological challenges in the microelectronics industry in various technology nodes. Every new technology node, characterized by the minimal device dimensions that are used, has required innovations in new materials and transistor design. The introduction of deposited high-κ gate dielectrics and metal gates as replacements for the thermally grown SiO2 and poly-Si electrode was a major challenge that has been met in the transition toward the 32 nm technology node since it replaced the heart of the metal oxide semiconductor structure. For the next generation of technology nodes, even bigger hurdles will need to be overcome, since new device structures and high-mobility channel materials such as Ge and III–V compounds might be needed, according to the ITRS roadmap, to meet the power and performance specifications of the 16 nm CMOS node and beyond. The basic properties of these high-mobility channel materials and their impact on the device performance have to be fully understood to allow process integration and full-scale manufacturing. In addition to thermal stability, compatibility with other materials, electronic transport properties, and especially the passivation of electronically active defects at the interface with a high-κ dielectric, are enormous challenges. Many encouraging results have been obtained, but the stringent demands in terms of electrical performance and oxide thickness scaling needed for highly scaled CMOS devices are not yet fully met. Other areas where breakthroughs will be needed are the formation of low-resistivity contacts, especially on III–V materials, and III–V materials suited for pMOS channels. An overview of the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices is given in this issue of MRS Bulletin.


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