scholarly journals Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis

2021 ◽  
Author(s):  
Utkarsh Upadhyay ◽  
Ashish Raman ◽  
RAVI RANJAN ◽  
Naveen Kumar
Keyword(s):  
Potential Energy ◽  
Electric Potential ◽  
Tunneling Current ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Third Order ◽  
Band To Band Tunneling ◽  
Non Local ◽  
Intermodulation Distortions ◽  
Intercept Point

Abstract In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with better Ion. HfO2 is used for better tunneling current. With this device, Different parameters such as unit parameter, analogue parameter, and linearity parameter have been studied and investigated the output of the H-TFET. As unit parameters, the electric field, electric potential, energy band diagram, and non-local band-to-band tunneling rate (BTBT) have all been observed. Second and third-order harmonics distortion (HD2, HD3), third-order current intercept point (IIP3), third-order intermodulation distortions (IMD3), and second and third-order voltage intercept point (VIP2, VIP3) are evaluated as linearity parameters that characterize the device's distortions and linearity. We obtained Ion\({\text{=1.6×}10}^{-4}\) A/µm, Ioff=2.1\({\text{×}10}^{-19}\) A/µm, Ion /Ioff=7.6\({\text{×}10}^{14}\),threshold voltage Vt=0.3449 V. © 2017 Elsevier Inc. All rights reserved.

scholarly journals Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Rafał Antoni Bogaczewicz ◽  
Ewa Popko ◽  
Katarzyna Renata Gwóźdź
Keyword(s):  
Band Structure ◽  
Electric Potential ◽  
Energy Band ◽  
Theoretical Calculations ◽  
Energy Band Diagram ◽  
Depletion Region ◽  
Semiconductor Heterostructures ◽  
Band Diagram ◽  
Approximation Model

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

60-GHz Self-Heterodyne Through-Repeater Systems with Suppressed Third-Order Intermodulation Distortions

2010 ◽  
Vol E93-C (1) ◽  
pp. 94-100 ◽  
Author(s):  
Chang-Soon CHOI ◽  
Yozo SHOJI ◽  
Hiroki OHTA
Keyword(s):  
60 Ghz ◽  
Third Order ◽  
Intermodulation Distortions

scholarly journals Perturbative linearization of super-Yang-Mills theories in general gauges

2021 ◽  
Vol 2021 (6) ◽  
Author(s):  
Hannes Malcha ◽  
Hermann Nicolai
Keyword(s):  
Large Class ◽  
Fourth Order ◽  
Landau Gauge ◽  
Third Order ◽  
Yang Mills ◽  
Free Theory ◽  
Non Linear ◽  
Functional Measure ◽  
Non Local ◽  
Jacobi Determinant

Abstract Supersymmetric Yang-Mills theories can be characterized by a non-local and non-linear transformation of the bosonic fields (Nicolai map) mapping the interacting functional measure to that of a free theory, such that the Jacobi determinant of the transformation equals the product of the fermionic determinants obtained by integrating out the gauginos and ghosts at least on the gauge hypersurface. While this transformation has been known so far only for the Landau gauge and to third order in the Yang-Mills coupling, we here extend the construction to a large class of (possibly non-linear and non-local) gauges, and exhibit the conditions for all statements to remain valid off the gauge hypersurface. Finally, we present explicit results to second order in the axial gauge and to fourth order in the Landau gauge.

Mitigating the Effects of Non-Linear Distortion Using Polarizers in Microwave Photonic Link

2019 ◽  
Vol 0 (0) ◽  
Author(s):  
Sarika Singh ◽  
Sandeep K. Arya ◽  
Shelly Singla
Keyword(s):  
Dynamic Range ◽  
Extinction Ratio ◽  
Polarization Angle ◽  
Third Order ◽  
Microwave Photonic ◽  
Linear Behavior ◽  
Spurious Free Dynamic Range ◽  
Non Linear ◽  
Intermodulation Distortions ◽  
Insertion Losses

AbstractA scheme to suppress nonlinear intermodulation distortion in microwave photonic (MWP) link is proposed by using polarizers to compensate inherent non-linear behavior of dual-electrode Mach-Zehnder modulator (DE-MZM). Insertion losses and extinction ratio have also been considered. Simulation results depict that spurious free dynamic range (SFDR) of proposed link reaches to 130.743 dB.Hz2/3. A suppression of 41 dB in third order intermodulation distortions and an improvement of 15.3 dB is reported when compared with the conventional link. In addition, an electrical spectrum at different polarization angles is extracted and 79^\circ is found to be optimum value of polarization angle.

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

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