Safety analysis of wheel brake system based on STAMP/STPA and Monte Carlo simulation

2018 ◽  
Vol 29 (6) ◽  
pp. 1327
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Safety Analysis ◽  
Brake System ◽  
Wheel Brake

Safety Analysis of the Advanced Airspace Concept using Monte Carlo Simulation

2010 ◽  
Author(s):  
David Blum ◽  
David Thipphavong ◽  
Tamika Rentas ◽  
Ye He ◽  
Xi Wang ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Safety Analysis

scholarly journals Model-Based Safety Analysis for the Fly-by-Wire System by Using Monte Carlo Simulation

Processes ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 90 ◽  
Author(s):  
Zhong Lu ◽  
Lu Zhuang ◽  
Li Dong ◽  
Xihui Liang
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Performance Metrics ◽  
System Development ◽  
Simulation Method ◽  
Safety Analysis ◽  
System Response ◽  
Model Based ◽  
Simulink Model ◽  
Failure Conditions

Safety analysis is one of the important means to show compliance with airworthiness requirements. The traditional safety analysis methods are significantly dependent on analysts’ skills and experiences. A model-based safety analysis approach is proposed for typical fly-by-wire (FBW) systems based on the system development model built via Simulink, by which the response of system performances can be simulated. The safety requirements of the FBW system are defined by presenting the thresholds of system performance metrics, and the effects of failure conditions on aircraft safety are determined according to the system response simulation by injecting failures or failure combinations into the Simulink model. The Monte Carlo simulation method is used to calculate the probability of unsafe conditions, whose effects are determined by the system response simulation with fault injections. Finally, a case study is used to illustrate the effectiveness and advantages of our proposed approach.

Formal Design and Safety Analysis of AIR6110 Wheel Brake System

2015 ◽  
pp. 518-535 ◽  
Author(s):  
M. Bozzano ◽  
A. Cimatti ◽  
A. Fernandes Pires ◽  
D. Jones ◽  
G. Kimberly ◽  
...  
Keyword(s):  
Safety Analysis ◽  
Brake System ◽  
Formal Design ◽  
Wheel Brake

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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