scholarly journals Исследование изолирующей области планарных сверхпроводниковых YBCO-структур, формируемых методом задающей маски

2018 ◽  
Vol 60 (11) ◽  
pp. 2100
Author(s):  
Д.В. Мастеров ◽  
С.А. Павлов ◽  
A.Е. Парафин ◽  
Е.В. Скороходов ◽  
П.А. Юнин
Keyword(s):  
High Temperature ◽  
Cerium Oxide ◽  
Growth Conditions ◽  
Ybco Superconductor ◽  
Cubic Zirconia ◽  
Planar Structures ◽  
Micron Size ◽  
The Creation ◽  
Electrophysical Parameters

Abstract —The development of a new “master mask” method for the manufacture of planar structures based on a high-temperature YBCO superconductor is considered. The method involves the creation of a mask on the blank substrate and, upon deposition of YBCO, the superconducting elements are formed in preset local windows of the mask with isolation regions formed between them. Such growth conditions allow the fabrication of micron-size superconducting elements with excellent electrophysical parameters and a smooth su-rface. The influence of the parameters of the master mask of amorphous cerium oxide on the isolating properties of the resulting isolation regions during the fabrication of planar structures on sapphire and cubic zirconia substrates with epitaxial cerium oxide sublayers has been studied.

scholarly journals Исследование параметров сверхпроводящих и изолирующих элементов структур, получаемых на пленках YBCO методом задающей маски, при уменьшении их размеров

2021 ◽  
Vol 63 (9) ◽  
pp. 1218
Author(s):  
Д.В. Мастеров. ◽  
C.A. Павлов ◽  
A.E. Парафин ◽  
E.B. Скороходов
Keyword(s):  
High Temperature ◽  
High Temperature Superconductor ◽  
Planar Structures ◽  
Electrophysical Parameters

This article is devoted to the study of the electrophysical parameters of superconducting and insulating elements of planar structures manufactured by the preliminary topology mask method based on the high-temperature superconductor YBa2Cu3O7-d, when the size of the elements is reduced to values of the order of one micrometer. Using standard photolithography by the preliminary topology mask method, structures with superconducting elements with a width of 2 microns and parameters sufficient for instrument applications are obtained.

Effect of Additives on High Temperature Deformation in Cubic Zirconia (Y-CSZ)

2008 ◽  
Vol 57 (6) ◽  
pp. 543-547
Author(s):  
Takuma WADA ◽  
Takahiro KAKEI ◽  
Hiroyuki HORII ◽  
Takeshi SHIONO ◽  
Yasunori OKAMOTO
Keyword(s):  
High Temperature ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
Cubic Zirconia ◽  
Effect Of Additives

scholarly journals Исследование нелегированных нанокристаллических алмазных пленок, выращенных из газовой фазы в плазме СВЧ разряда

2021 ◽  
Vol 55 (1) ◽  
pp. 49
Author(s):  
А.Л. Вихарев ◽  
С.А. Богданов ◽  
Н.М. Овечкин ◽  
О.А. Иванов ◽  
Д.Б. Радищев ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Inert Gas ◽  
Dielectric Films ◽  
High Temperature Annealing ◽  
Structural And Electrical Properties ◽  
Methane Mixture

Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

ChemInform Abstract: Growth Conditions, Electrical Resistivity, Microhardness, and Thermal Properties of Nb5Sn2Ga Single Crystals Synthesized from High-Temperature Tin Solutions.

ChemInform ◽  
2010 ◽  
Vol 30 (11) ◽  
pp. no-no
Author(s):  
Shigeru Okada ◽  
Kunio Kudou ◽  
Toetsu Shishido ◽  
Iwami Higashi ◽  
Hiroyuki Horiuchi ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Thermal Properties ◽  
High Temperature ◽  
Single Crystals ◽  
Growth Conditions

High-temperature grain boundary sliding behavior and grain boundary energy in cubic zirconia bicrystals

2004 ◽  
Vol 52 (8) ◽  
pp. 2349-2357 ◽  
Author(s):  
Hidehiro Yoshida ◽  
Kenji Yokoyama ◽  
Naoya Shibata ◽  
Yuichi Ikuhara ◽  
Taketo Sakuma
Keyword(s):  
High Temperature ◽  
Grain Boundary ◽  
Boundary Energy ◽  
Grain Boundary Sliding ◽  
Grain Boundary Energy ◽  
Cubic Zirconia ◽  
Boundary Sliding

A nitrilo-tri-acetic-acid/acetic acid route for the deposition of epitaxial cerium oxide films as high temperature superconductor buffer layers

2010 ◽  
Vol 183 (9) ◽  
pp. 2154-2160 ◽  
Author(s):  
T.T. Thuy ◽  
P. Lommens ◽  
V. Narayanan ◽  
N. Van de Velde ◽  
K. De Buysser ◽  
...  
Keyword(s):  
Acetic Acid ◽  
High Temperature ◽  
Cerium Oxide ◽  
High Temperature Superconductor ◽  
Oxide Films ◽  
Buffer Layers
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