scholarly journals POSITION-SENSITIVE PHOTODETECTOR ARRAY FOR OPTICAL COORDINATOR

2021 ◽  
Vol 82 (1) ◽  
pp. 5-8
Author(s):  
Volodimir Verbitskiy ◽  
◽  
Andriy Voronko ◽  
Dmytro Verbitskiy ◽  
◽  
...  

New position-sensitive matrices for an optical coordinator and a method for determining the coordinates of a light spot for micromovements are presented, an analysis of the topologies and direction-finding characteristics of the proposed matrices is shown.

2012 ◽  
Vol 482-484 ◽  
pp. 767-770
Author(s):  
Qun Ma ◽  
Wen Gang Qin ◽  
Shi Liang Ma

This paper presents the design of a portable optical PSD (Position Sensing Detector) for application in outdoor environment. The system is able to measure changes in the position of a light spot emitted by a usual laser device (635-1000nm wavelength) in outdoor environment. A piece of frosted glass is employed as the target to show the light spot, and a narrow-band filter and 1% neutral filter are adopted to reduce the interference from sunlight. The paper uses a pinhole camera to reduce the device volume, but lens distortion with off-the-shelf cameras is significant. The image manipulation circuit corrects the distortion, and displays the light spot center position.


1977 ◽  
Vol 13 (14) ◽  
pp. 422 ◽  
Author(s):  
J. Fieret ◽  
A. Kwakernaak ◽  
S. Middelhoek

2014 ◽  
Vol 43 (4) ◽  
pp. 423004
Author(s):  
章鹏 ZHANG Peng ◽  
谭艾英 TAN Ai-ying ◽  
陈伟民 CHEN Wei-min ◽  
张益 ZHANG Yi

Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.


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